TY - JOUR
T1 - Radiation hard monolithic CMOS sensors with small electrodes for HL-LHC and beyond
AU - Sanchez, C. Solans
AU - Allport, P.
AU - Tortajada, I. Asensi
AU - Bortoletto, D.
AU - Buttar, C.
AU - Cardella, R.
AU - Dachs, F.
AU - Dao, V.
AU - Denizli, H.
AU - Dyndal, M.
AU - de Acedo, L. Flores Sanz
AU - Freeman, P.
AU - Gabrielli, A.
AU - Gonella, L.
AU - Oyulmaz, K.
AU - Pernegger, H.
AU - Riedler, P.
AU - Sandaker, H.
AU - Sharma, A.
AU - Snoeys, W.
AU - Pais, J. Torres
AU - Worm, S.
N1 - Publisher Copyright:
© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND 4.0).
PY - 2021/4/15
Y1 - 2021/4/15
N2 - The upgrade of tracking detectors for experiments at the HL-LHC and future colliders requires the development of novel radiation hard silicon sensors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation hard monolithic CMOS sensors. We designed, manufactured and tested DMAPS in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs, that have a pixel pitch well below the current hybrid pixel detectors, and less multiple scattering due to a reduced total silicon thickness. In this document we present the recent results from these sensors manufactured on Czochralski silicon substrates in terms of cluster size, impact on tracking and time resolution from measurements carried out at beam tests on irradiated samples at 1e15 1 MeV neq/cm2,.
AB - The upgrade of tracking detectors for experiments at the HL-LHC and future colliders requires the development of novel radiation hard silicon sensors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation hard monolithic CMOS sensors. We designed, manufactured and tested DMAPS in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs, that have a pixel pitch well below the current hybrid pixel detectors, and less multiple scattering due to a reduced total silicon thickness. In this document we present the recent results from these sensors manufactured on Czochralski silicon substrates in terms of cluster size, impact on tracking and time resolution from measurements carried out at beam tests on irradiated samples at 1e15 1 MeV neq/cm2,.
UR - https://www.scopus.com/pages/publications/85105453935
M3 - Conference article
AN - SCOPUS:85105453935
SN - 1824-8039
VL - 390
JO - Proceedings of Science
JF - Proceedings of Science
M1 - 871
T2 - 40th International Conference on High Energy Physics, ICHEP 2020
Y2 - 28 July 2020 through 6 August 2020
ER -