Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration

G. Lindström; M. Ahmed; S. Albergo; P. Allport; D. Anderson; L. Andricek; M. M. Angarano; V. Augelli; N. Bacchetta; P. Bartalini; R. Bates; U. Biggeri; G. M. Bilei; D. Bisello; D. Boemi; E. Borchi; T. Botila; T. J. Brodbeck; M. Bruzzi; T. Budzynski; P. Burger; F. Campabadal; G. Casse; E. Catacchini; A. Chilingarov; P. Ciampolini; V. Cindro; M. J. Costa; D. Creanza; P. Clauws; C. da Via; G. Davies; W. de Boer; R. Dell'Orso; M. de Palma; B. Dezillie; V. Eremin; O. Evrard; G. Fallica; G. Fanourakis; H. Feick; E. Focardi; L. Fonseca; E. Fretwurst; J. Fuster; K. Gabathuler; M. Glaser; P. Grabiec; E. Grigoriev; G. Hall; M. Hanlon; F. Hauler; S. Heising; A. Holmes-Siedle; R. Horisberger; G. Hughes; M. Huhtinen; I. Ilyashenko; A. Ivanov; B. K. Jones; L. Jungermann; A. Kaminsky; Z. Kohout; G. Kramberger; M. Kuhnke; S. Kwan; F. Lemeilleur; C. Leroy; M. Letheren; Z. Li; T. Ligonzo; V. Linhart; P. Litovchenko; D. Loukas; M. Lozano; Z. Luczynski; G. Lutz; B. MacEvoy; S. Manolopoulos; A. Markou; C. Martinez; A. Messineo; M. Mikuž; M. Moll; E. Nossarzewska; G. Ottaviani; V. Oshea; G. Parrini; D. Passeri; D. Petre; A. Pickford; I. Pintilie; L. Pintilie; S. Pospisil; R. Potenza; C. Raine; J. M. Rafi; P. N. Ratoff; R. H. Richter; P. Riedler; S. Roe; P. Roy; A. Ruzin; A. I. Ryazanov; A. Santocchia; L. Schiavulli; P. Sicho; I. Siotis; T. Sloan; W. Slysz; K. Smith; M. Solanky; B. Sopko; K. Stolze; B. Sundby Avset; B. Svensson; C. Tivarus; G. Tonelli; A. Tricomi; S. Tzamarias; G. Valvo; A. Vasllescu; A. Vayaki; E. Verbitskaya; P. Verdini; V. Vrba; S. Watts; E. R. Weber; M. Wegrzecki; I. Wegrzecka; P. Weilhammer; R. Wheadon; C. Wilburn; I. Wilhelm; R. Wunstorf; J. Wüstenfeld; J. Wyss; K. Zankel; P. Zabierowski; D. Žontar

doi:10.1016/S0168-9002(01)00560-5

Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration

G. Lindström
, M. Ahmed
, S. Albergo
, P. Allport
, D. Anderson
, L. Andricek
, M. M. Angarano
, V. Augelli
, N. Bacchetta
, P. Bartalini
, R. Bates
, U. Biggeri
, G. M. Bilei
, D. Bisello
, D. Boemi
, E. Borchi
, T. Botila
, T. J. Brodbeck
, M. Bruzzi
, T. Budzynski

P. Burger, F. Campabadal, G. Casse, E. Catacchini, A. Chilingarov, P. Ciampolini, V. Cindro, M. J. Costa, D. Creanza, P. Clauws, C. da Via, G. Davies, W. de Boer, R. Dell'Orso, M. de Palma, B. Dezillie, V. Eremin, O. Evrard, G. Fallica, G. Fanourakis, H. Feick, E. Focardi, L. Fonseca, E. Fretwurst, J. Fuster, K. Gabathuler, M. Glaser, P. Grabiec, E. Grigoriev, G. Hall, M. Hanlon, F. Hauler, S. Heising, A. Holmes-Siedle, R. Horisberger, G. Hughes, M. Huhtinen, I. Ilyashenko, A. Ivanov, B. K. Jones, L. Jungermann, A. Kaminsky, Z. Kohout, G. Kramberger, M. Kuhnke, S. Kwan, F. Lemeilleur, C. Leroy, M. Letheren, Z. Li, T. Ligonzo, V. Linhart, P. Litovchenko, D. Loukas, M. Lozano, Z. Luczynski, G. Lutz, B. MacEvoy, S. Manolopoulos, A. Markou, C. Martinez, A. Messineo, M. Mikuž, M. Moll, E. Nossarzewska, G. Ottaviani, V. Oshea, G. Parrini, D. Passeri, D. Petre, A. Pickford, I. Pintilie, L. Pintilie, S. Pospisil, R. Potenza, C. Raine, J. M. Rafi, P. N. Ratoff, R. H. Richter, P. Riedler, S. Roe, P. Roy, A. Ruzin, A. I. Ryazanov, A. Santocchia, L. Schiavulli, P. Sicho, I. Siotis, T. Sloan, W. Slysz, K. Smith, M. Solanky, B. Sopko, K. Stolze, B. Sundby Avset, B. Svensson, C. Tivarus, G. Tonelli, A. Tricomi, S. Tzamarias, G. Valvo, A. Vasllescu, A. Vayaki, E. Verbitskaya, P. Verdini, V. Vrba, S. Watts, E. R. Weber, M. Wegrzecki, I. Wegrzecka, P. Weilhammer, R. Wheadon, C. Wilburn, I. Wilhelm, R. Wunstorf, J. Wüstenfeld, J. Wyss, K. Zankel, P. Zabierowski, D. Žontar

Physics and Astronomy

University of Hamburg
Brunel University London
University of Catania
University of Liverpool
Fermi National Accelerator Laboratory
Administrative Headquarters of the Max Planck Society
University of Perugia
University of Bari
University of Padua
University of Glasgow
University of Florence
Institut de Physique des Materiaux, Bucarest-Magurele
Lancaster University
Institute of Microelectronics and Photonics
Canberra Semiconductor N.V
Dept. Física At. Mol. y Nuclear
University of Ljubljana
Ghent University
King's College London
Karlsruhe Institute of Technology
National Institute for Nuclear Physics
Brookhaven National Laboratory
Ioffe Physical Technical Institute
STMicroelectronics
Institute of Nuclear Physics ”Demokritos”
University of California at Berkeley
Paul Scherrer Institute
CERN
Imperial College London
Czech Technical University in Prague
University of Montreal
NASU - Institute of Nuclear Research
University of Modena and Reggio Emilia
Tel Aviv University
Russian Research Centre Kurchatov Institute
Czech Academy of Sciences
CiS Institut für Mikrosensorik gGmbH
SINTEF
KTH Royal Institute of Technology
Horia Hulubei National Institute of Physics and Nuclear Engineering
Micron Semiconductor, Ltd.
Charles University
TU Dortmund University

Research output: Contribution to journal › Conference article › peer-review

393 Scopus citations

Abstract

The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2 × 10¹⁷ O/cm³ in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5 × 10¹⁴cm^-2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the "Hamburg model": its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.

Original language	English
Pages (from-to)	308-326
Number of pages	19
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	466
Issue number	2
DOIs	https://doi.org/10.1016/S0168-9002(01)00560-5
State	Published - Jul 1 2001
Event	4th International Symposium on Development and Application of Semiconductor Tracking Detectors - Hiroshima, Japan Duration: Mar 22 2000 → Mar 25 2000

Keywords

Defect engineering
Non ionizing energy loss
Radiation hardness
Silicon detectors

Access to Document

10.1016/S0168-9002(01)00560-5

Cite this

Lindström, G., Ahmed, M., Albergo, S., Allport, P., Anderson, D., Andricek, L., Angarano, M. M., Augelli, V., Bacchetta, N., Bartalini, P., Bates, R., Biggeri, U., Bilei, G. M., Bisello, D., Boemi, D., Borchi, E., Botila, T., Brodbeck, T. J., Bruzzi, M., ... Žontar, D. (2001). Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration. Nuclear Inst. and Methods in Physics Research, A, 466(2), 308-326. https://doi.org/10.1016/S0168-9002(01)00560-5

@article{e0274acda0314f3b9f5f573bedc03a05,

title = "Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration",

abstract = "The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2 × 1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5 × 1014cm-2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the {"}Hamburg model{"}: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.",

keywords = "Defect engineering, Non ionizing energy loss, Radiation hardness, Silicon detectors",

author = "G. Lindstr{\"o}m and M. Ahmed and S. Albergo and P. Allport and D. Anderson and L. Andricek and Angarano, \{M. M.\} and V. Augelli and N. Bacchetta and P. Bartalini and R. Bates and U. Biggeri and Bilei, \{G. M.\} and D. Bisello and D. Boemi and E. Borchi and T. Botila and Brodbeck, \{T. J.\} and M. Bruzzi and T. Budzynski and P. Burger and F. Campabadal and G. Casse and E. Catacchini and A. Chilingarov and P. Ciampolini and V. Cindro and Costa, \{M. J.\} and D. Creanza and P. Clauws and \{da Via\}, C. and G. Davies and \{de Boer\}, W. and R. Dell'Orso and \{de Palma\}, M. and B. Dezillie and V. Eremin and O. Evrard and G. Fallica and G. Fanourakis and H. Feick and E. Focardi and L. Fonseca and E. Fretwurst and J. Fuster and K. Gabathuler and M. Glaser and P. Grabiec and E. Grigoriev and G. Hall and M. Hanlon and F. Hauler and S. Heising and A. Holmes-Siedle and R. Horisberger and G. Hughes and M. Huhtinen and I. Ilyashenko and A. Ivanov and Jones, \{B. K.\} and L. Jungermann and A. Kaminsky and Z. Kohout and G. Kramberger and M. Kuhnke and S. Kwan and F. Lemeilleur and C. Leroy and M. Letheren and Z. Li and T. Ligonzo and V. Linhart and P. Litovchenko and D. Loukas and M. Lozano and Z. Luczynski and G. Lutz and B. MacEvoy and S. Manolopoulos and A. Markou and C. Martinez and A. Messineo and M. Miku{\v z} and M. Moll and E. Nossarzewska and G. Ottaviani and V. Oshea and G. Parrini and D. Passeri and D. Petre and A. Pickford and I. Pintilie and L. Pintilie and S. Pospisil and R. Potenza and C. Raine and Rafi, \{J. M.\} and Ratoff, \{P. N.\} and Richter, \{R. H.\} and P. Riedler and S. Roe and P. Roy and A. Ruzin and Ryazanov, \{A. I.\} and A. Santocchia and L. Schiavulli and P. Sicho and I. Siotis and T. Sloan and W. Slysz and K. Smith and M. Solanky and B. Sopko and K. Stolze and \{Sundby Avset\}, B. and B. Svensson and C. Tivarus and G. Tonelli and A. Tricomi and S. Tzamarias and G. Valvo and A. Vasllescu and A. Vayaki and E. Verbitskaya and P. Verdini and V. Vrba and S. Watts and Weber, \{E. R.\} and M. Wegrzecki and I. Wegrzecka and P. Weilhammer and R. Wheadon and C. Wilburn and I. Wilhelm and R. Wunstorf and J. W{\"u}stenfeld and J. Wyss and K. Zankel and P. Zabierowski and D. {\v Z}ontar",

year = "2001",

month = jul,

day = "1",

doi = "10.1016/S0168-9002(01)00560-5",

language = "English",

volume = "466",

pages = "308--326",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

number = "2",

note = "4th International Symposium on Development and Application of Semiconductor Tracking Detectors ; Conference date: 22-03-2000 Through 25-03-2000",

}

Lindström, G, Ahmed, M, Albergo, S, Allport, P, Anderson, D, Andricek, L, Angarano, MM, Augelli, V, Bacchetta, N, Bartalini, P, Bates, R, Biggeri, U, Bilei, GM, Bisello, D, Boemi, D, Borchi, E, Botila, T, Brodbeck, TJ, Bruzzi, M, Budzynski, T, Burger, P, Campabadal, F, Casse, G, Catacchini, E, Chilingarov, A, Ciampolini, P, Cindro, V, Costa, MJ, Creanza, D, Clauws, P, da Via, C, Davies, G, de Boer, W, Dell'Orso, R, de Palma, M, Dezillie, B, Eremin, V, Evrard, O, Fallica, G, Fanourakis, G, Feick, H, Focardi, E, Fonseca, L, Fretwurst, E, Fuster, J, Gabathuler, K, Glaser, M, Grabiec, P, Grigoriev, E, Hall, G, Hanlon, M, Hauler, F, Heising, S, Holmes-Siedle, A, Horisberger, R, Hughes, G, Huhtinen, M, Ilyashenko, I, Ivanov, A, Jones, BK, Jungermann, L, Kaminsky, A, Kohout, Z, Kramberger, G, Kuhnke, M, Kwan, S, Lemeilleur, F, Leroy, C, Letheren, M, Li, Z, Ligonzo, T, Linhart, V, Litovchenko, P, Loukas, D, Lozano, M, Luczynski, Z, Lutz, G, MacEvoy, B, Manolopoulos, S, Markou, A, Martinez, C, Messineo, A, Mikuž, M, Moll, M, Nossarzewska, E, Ottaviani, G, Oshea, V, Parrini, G, Passeri, D, Petre, D, Pickford, A, Pintilie, I, Pintilie, L, Pospisil, S, Potenza, R, Raine, C, Rafi, JM, Ratoff, PN, Richter, RH, Riedler, P, Roe, S, Roy, P, Ruzin, A, Ryazanov, AI, Santocchia, A, Schiavulli, L, Sicho, P, Siotis, I, Sloan, T, Slysz, W, Smith, K, Solanky, M, Sopko, B, Stolze, K, Sundby Avset, B, Svensson, B, Tivarus, C, Tonelli, G, Tricomi, A, Tzamarias, S, Valvo, G, Vasllescu, A, Vayaki, A, Verbitskaya, E, Verdini, P, Vrba, V, Watts, S, Weber, ER, Wegrzecki, M, Wegrzecka, I, Weilhammer, P, Wheadon, R, Wilburn, C, Wilhelm, I, Wunstorf, R, Wüstenfeld, J, Wyss, J, Zankel, K, Zabierowski, P & Žontar, D 2001, 'Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration', Nuclear Inst. and Methods in Physics Research, A, vol. 466, no. 2, pp. 308-326. https://doi.org/10.1016/S0168-9002(01)00560-5

TY - JOUR

T1 - Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration

AU - Lindström, G.

AU - Ahmed, M.

AU - Albergo, S.

AU - Allport, P.

AU - Anderson, D.

AU - Andricek, L.

AU - Angarano, M. M.

AU - Augelli, V.

AU - Bacchetta, N.

AU - Bartalini, P.

AU - Bates, R.

AU - Biggeri, U.

AU - Bilei, G. M.

AU - Bisello, D.

AU - Boemi, D.

AU - Borchi, E.

AU - Botila, T.

AU - Brodbeck, T. J.

AU - Bruzzi, M.

AU - Budzynski, T.

AU - Burger, P.

AU - Campabadal, F.

AU - Casse, G.

AU - Catacchini, E.

AU - Chilingarov, A.

AU - Ciampolini, P.

AU - Cindro, V.

AU - Costa, M. J.

AU - Creanza, D.

AU - Clauws, P.

AU - da Via, C.

AU - Davies, G.

AU - de Boer, W.

AU - Dell'Orso, R.

AU - de Palma, M.

AU - Dezillie, B.

AU - Eremin, V.

AU - Evrard, O.

AU - Fallica, G.

AU - Fanourakis, G.

AU - Feick, H.

AU - Focardi, E.

AU - Fonseca, L.

AU - Fretwurst, E.

AU - Fuster, J.

AU - Gabathuler, K.

AU - Glaser, M.

AU - Grabiec, P.

AU - Grigoriev, E.

AU - Hall, G.

AU - Hanlon, M.

AU - Hauler, F.

AU - Heising, S.

AU - Holmes-Siedle, A.

AU - Horisberger, R.

AU - Hughes, G.

AU - Huhtinen, M.

AU - Ilyashenko, I.

AU - Ivanov, A.

AU - Jones, B. K.

AU - Jungermann, L.

AU - Kaminsky, A.

AU - Kohout, Z.

AU - Kramberger, G.

AU - Kuhnke, M.

AU - Kwan, S.

AU - Lemeilleur, F.

AU - Leroy, C.

AU - Letheren, M.

AU - Li, Z.

AU - Ligonzo, T.

AU - Linhart, V.

AU - Litovchenko, P.

AU - Loukas, D.

AU - Lozano, M.

AU - Luczynski, Z.

AU - Lutz, G.

AU - MacEvoy, B.

AU - Manolopoulos, S.

AU - Markou, A.

AU - Martinez, C.

AU - Messineo, A.

AU - Mikuž, M.

AU - Moll, M.

AU - Nossarzewska, E.

AU - Ottaviani, G.

AU - Oshea, V.

AU - Parrini, G.

AU - Passeri, D.

AU - Petre, D.

AU - Pickford, A.

AU - Pintilie, I.

AU - Pintilie, L.

AU - Pospisil, S.

AU - Potenza, R.

AU - Raine, C.

AU - Rafi, J. M.

AU - Ratoff, P. N.

AU - Richter, R. H.

AU - Riedler, P.

AU - Roe, S.

AU - Roy, P.

AU - Ruzin, A.

AU - Ryazanov, A. I.

AU - Santocchia, A.

AU - Schiavulli, L.

AU - Sicho, P.

AU - Siotis, I.

AU - Sloan, T.

AU - Slysz, W.

AU - Smith, K.

AU - Solanky, M.

AU - Sopko, B.

AU - Stolze, K.

AU - Sundby Avset, B.

AU - Svensson, B.

AU - Tivarus, C.

AU - Tonelli, G.

AU - Tricomi, A.

AU - Tzamarias, S.

AU - Valvo, G.

AU - Vasllescu, A.

AU - Vayaki, A.

AU - Verbitskaya, E.

AU - Verdini, P.

AU - Vrba, V.

AU - Watts, S.

AU - Weber, E. R.

AU - Wegrzecki, M.

AU - Wegrzecka, I.

AU - Weilhammer, P.

AU - Wheadon, R.

AU - Wilburn, C.

AU - Wilhelm, I.

AU - Wunstorf, R.

AU - Wüstenfeld, J.

AU - Wyss, J.

AU - Zankel, K.

AU - Zabierowski, P.

AU - Žontar, D.

PY - 2001/7/1

Y1 - 2001/7/1

N2 - The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2 × 1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5 × 1014cm-2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the "Hamburg model": its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.

AB - The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2 × 1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5 × 1014cm-2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the "Hamburg model": its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.

KW - Defect engineering

KW - Non ionizing energy loss

KW - Radiation hardness

KW - Silicon detectors

UR - https://www.scopus.com/pages/publications/0035399362

U2 - 10.1016/S0168-9002(01)00560-5

DO - 10.1016/S0168-9002(01)00560-5

M3 - Conference article

AN - SCOPUS:0035399362

SN - 0168-9002

VL - 466

SP - 308

EP - 326

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 2

T2 - 4th International Symposium on Development and Application of Semiconductor Tracking Detectors

Y2 - 22 March 2000 through 25 March 2000

ER -

Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration

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Keywords

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