Radiation hardness of cryogenic silicon detectors

T. O. Niinikoski; M. Abreu; W. Bell; P. Berglund; W. De Boer; E. Borchi; K. Borer; M. Bruzzi; S. Buontempo; L. Casagrande; S. Chapuy; V. Cindro; P. Collins; N. D'Ambrosio; C. Da Viá; S. R.H. Devine; B. Dezillie; Z. Dimcovski; V. Eremin; A. Esposito; V. Granata; E. Grigoriev; S. Grohmann; F. Hauler; E. Heijne; S. Heising; S. Janos; L. Jungermann; I. Konorov; Z. Li; C. Lourenço; M. Mikuz; V. O'Shea; S. Pagano; V. G. Palmieri; S. Paul; S. Pirollo; K. Pretzl; P. Rato Mendes; G. Ruggiero; K. Smith; P. Sonderegger; P. Sousa; E. Verbitskaya; S. Watts; M. Zavrtanik

doi:10.1016/S0168-9002(01)01644-8

Radiation hardness of cryogenic silicon detectors

T. O. Niinikoski
, M. Abreu
, W. Bell
, P. Berglund
, W. De Boer
, E. Borchi
, K. Borer
, M. Bruzzi
, S. Buontempo
, L. Casagrande
, S. Chapuy
, V. Cindro
, P. Collins
, N. D'Ambrosio
, C. Da Viá
, S. R.H. Devine
, B. Dezillie
, Z. Dimcovski
, V. Eremin
, A. Esposito

V. Granata, E. Grigoriev, S. Grohmann, F. Hauler, E. Heijne, S. Heising, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenço, M. Mikuz, V. O'Shea, S. Pagano, V. G. Palmieri, S. Paul, S. Pirollo, K. Pretzl, P. Rato Mendes, G. Ruggiero, K. Smith, P. Sonderegger, P. Sousa, E. Verbitskaya, S. Watts, M. Zavrtanik

Physics and Astronomy

CERN
Laboratório de Instrumentação e Física Experimental de Partículas
University of Glasgow
Aalto University
Karlsruhe Institute of Technology
University of Florence
University of Bern
University of Naples Federico II
University of Geneva
Jožef Stefan Institute
Brookhaven National Laboratory
Ioffe Physical Technical Institute
Technical University of Munich
Brunel University London

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We shall review test results which show that silicon detectors can withstand at 130K temperature a fluence of 2 × 10¹⁵cm^-2 of 1 MeV neutrons, which is about 10 times higher than the fluence tolerated by the best detectors operated close to room temperature. The tests were carried out on simple pad devices and on microstrip detectors of different types. The devices were irradiated at room temperature using reactor neutrons, and in situ at low temperatures using high-energy protons and lead ions. No substantial difference was observed between samples irradiated at low temperature and those irradiated at room temperature, after beneficial annealing. The design of low-mass modules for low-temperature trackers is discussed briefly, together with the cooling circuits for small and large systems.

Original language	English
Pages (from-to)	569-582
Number of pages	14
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	476
Issue number	3
DOIs	https://doi.org/10.1016/S0168-9002(01)01644-8
State	Published - Jan 11 2002
Event	Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) - Firenze, Italy Duration: Jun 28 2000 → Jun 30 2000

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10.1016/S0168-9002(01)01644-8

Cite this

Niinikoski, T. O., Abreu, M., Bell, W., Berglund, P., De Boer, W., Borchi, E., Borer, K., Bruzzi, M., Buontempo, S., Casagrande, L., Chapuy, S., Cindro, V., Collins, P., D'Ambrosio, N., Da Viá, C., Devine, S. R. H., Dezillie, B., Dimcovski, Z., Eremin, V., ... Zavrtanik, M. (2002). Radiation hardness of cryogenic silicon detectors. Nuclear Inst. and Methods in Physics Research, A, 476(3), 569-582. https://doi.org/10.1016/S0168-9002(01)01644-8

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title = "Radiation hardness of cryogenic silicon detectors",

abstract = "We shall review test results which show that silicon detectors can withstand at 130K temperature a fluence of 2 × 1015cm-2 of 1 MeV neutrons, which is about 10 times higher than the fluence tolerated by the best detectors operated close to room temperature. The tests were carried out on simple pad devices and on microstrip detectors of different types. The devices were irradiated at room temperature using reactor neutrons, and in situ at low temperatures using high-energy protons and lead ions. No substantial difference was observed between samples irradiated at low temperature and those irradiated at room temperature, after beneficial annealing. The design of low-mass modules for low-temperature trackers is discussed briefly, together with the cooling circuits for small and large systems.",

author = "Niinikoski, \{T. O.\} and M. Abreu and W. Bell and P. Berglund and \{De Boer\}, W. and E. Borchi and K. Borer and M. Bruzzi and S. Buontempo and L. Casagrande and S. Chapuy and V. Cindro and P. Collins and N. D'Ambrosio and \{Da Vi{\'a}\}, C. and Devine, \{S. R.H.\} and B. Dezillie and Z. Dimcovski and V. Eremin and A. Esposito and V. Granata and E. Grigoriev and S. Grohmann and F. Hauler and E. Heijne and S. Heising and S. Janos and L. Jungermann and I. Konorov and Z. Li and C. Louren{\c c}o and M. Mikuz and V. O'Shea and S. Pagano and Palmieri, \{V. G.\} and S. Paul and S. Pirollo and K. Pretzl and Mendes, \{P. Rato\} and G. Ruggiero and K. Smith and P. Sonderegger and P. Sousa and E. Verbitskaya and S. Watts and M. Zavrtanik",

year = "2002",

month = jan,

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doi = "10.1016/S0168-9002(01)01644-8",

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Niinikoski, TO, Abreu, M, Bell, W, Berglund, P, De Boer, W, Borchi, E, Borer, K, Bruzzi, M, Buontempo, S, Casagrande, L, Chapuy, S, Cindro, V, Collins, P, D'Ambrosio, N, Da Viá, C, Devine, SRH, Dezillie, B, Dimcovski, Z, Eremin, V, Esposito, A, Granata, V, Grigoriev, E, Grohmann, S, Hauler, F, Heijne, E, Heising, S, Janos, S, Jungermann, L, Konorov, I, Li, Z, Lourenço, C, Mikuz, M, O'Shea, V, Pagano, S, Palmieri, VG, Paul, S, Pirollo, S, Pretzl, K, Mendes, PR, Ruggiero, G, Smith, K, Sonderegger, P, Sousa, P, Verbitskaya, E, Watts, S & Zavrtanik, M 2002, 'Radiation hardness of cryogenic silicon detectors', Nuclear Inst. and Methods in Physics Research, A, vol. 476, no. 3, pp. 569-582. https://doi.org/10.1016/S0168-9002(01)01644-8

TY - JOUR

T1 - Radiation hardness of cryogenic silicon detectors

AU - Niinikoski, T. O.

AU - Abreu, M.

AU - Bell, W.

AU - Berglund, P.

AU - De Boer, W.

AU - Borchi, E.

AU - Borer, K.

AU - Bruzzi, M.

AU - Buontempo, S.

AU - Casagrande, L.

AU - Chapuy, S.

AU - Cindro, V.

AU - Collins, P.

AU - D'Ambrosio, N.

AU - Da Viá, C.

AU - Devine, S. R.H.

AU - Dezillie, B.

AU - Dimcovski, Z.

AU - Eremin, V.

AU - Esposito, A.

AU - Granata, V.

AU - Grigoriev, E.

AU - Grohmann, S.

AU - Hauler, F.

AU - Heijne, E.

AU - Heising, S.

AU - Janos, S.

AU - Jungermann, L.

AU - Konorov, I.

AU - Li, Z.

AU - Lourenço, C.

AU - Mikuz, M.

AU - O'Shea, V.

AU - Pagano, S.

AU - Palmieri, V. G.

AU - Paul, S.

AU - Pirollo, S.

AU - Pretzl, K.

AU - Mendes, P. Rato

AU - Ruggiero, G.

AU - Smith, K.

AU - Sonderegger, P.

AU - Sousa, P.

AU - Verbitskaya, E.

AU - Watts, S.

AU - Zavrtanik, M.

PY - 2002/1/11

Y1 - 2002/1/11

N2 - We shall review test results which show that silicon detectors can withstand at 130K temperature a fluence of 2 × 1015cm-2 of 1 MeV neutrons, which is about 10 times higher than the fluence tolerated by the best detectors operated close to room temperature. The tests were carried out on simple pad devices and on microstrip detectors of different types. The devices were irradiated at room temperature using reactor neutrons, and in situ at low temperatures using high-energy protons and lead ions. No substantial difference was observed between samples irradiated at low temperature and those irradiated at room temperature, after beneficial annealing. The design of low-mass modules for low-temperature trackers is discussed briefly, together with the cooling circuits for small and large systems.

AB - We shall review test results which show that silicon detectors can withstand at 130K temperature a fluence of 2 × 1015cm-2 of 1 MeV neutrons, which is about 10 times higher than the fluence tolerated by the best detectors operated close to room temperature. The tests were carried out on simple pad devices and on microstrip detectors of different types. The devices were irradiated at room temperature using reactor neutrons, and in situ at low temperatures using high-energy protons and lead ions. No substantial difference was observed between samples irradiated at low temperature and those irradiated at room temperature, after beneficial annealing. The design of low-mass modules for low-temperature trackers is discussed briefly, together with the cooling circuits for small and large systems.

UR - https://www.scopus.com/pages/publications/0037059394

U2 - 10.1016/S0168-9002(01)01644-8

DO - 10.1016/S0168-9002(01)01644-8

M3 - Conference article

AN - SCOPUS:0037059394

SN - 0168-9002

VL - 476

SP - 569

EP - 582

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 3

T2 - Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K)

Y2 - 28 June 2000 through 30 June 2000

ER -

Radiation hardness of cryogenic silicon detectors

Abstract

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