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Recent developments and future perspectives in 3D silicon radiation sensors

  • G. F. Dalla Betta
  • , C. Da Via
  • , M. Povoli
  • , S. Parker
  • , M. Boscardin
  • , G. Darbo
  • , S. Grinstein
  • , P. Grenier
  • , J. Hasi
  • , C. Kenney
  • , A. Kok
  • , C. H. Lai
  • , G. Pellegrini
  • , S. Watts
  • University of Trento
  • Lawrence Berkeley National Laboratory
  • Fondazione Bruno Kessler
  • National Institute for Nuclear Physics
  • Autonomous University of Barcelona
  • SLAC National Accelerator Laboratory
  • SINTEF
  • University of Manchester
  • Centro Nacional de Microelectrónica (IMB-CNM-CSIC)

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

In this paper we report on the most recent achievements of the ATLAS 3D Sensors Collaboration in the development of silicon 3D sensors. Results from 3D pixels production for the ATLAS Insertable B-Layer (IBL) are presented, showing the high quality and good process reproducibility of the technology. In view of the future detector upgrades at the LHC, a new generation of 3D pixel sensors will be developed. This will require some new ideas and the solution of technological challenges. Both will briefly be addressed in this paper.

Original languageEnglish
Article numberC10006
JournalJournal of Instrumentation
Volume7
Issue number10
DOIs
StatePublished - Oct 2012

Keywords

  • Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission,etc)
  • Particle tracking detectors (Solid-state detectors)
  • Radiation-hard detectors
  • Solid state detectors

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