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Recent results from the CERN RD39 Collaboration on super-radiation hard cryogenic silicon detectors for LHC and LHC upgrade

  • J. Härkönen
  • , M. Abreu
  • , P. Anbinderis
  • , T. Anbinderis
  • , N. D'Ambrosio
  • , W. De Boer
  • , E. Borchi
  • , K. Borer
  • , M. Bruzzi
  • , S. Buontempo
  • , W. Chen
  • , V. Cindro
  • , B. Dezillie
  • , A. Dierlamm
  • , V. Eremin
  • , E. Gaubas
  • , V. Gorbatenko
  • , V. Granata
  • , E. Grigoriev
  • , S. Grohmann
  • F. Hauler, E. Heijne, S. Heising, O. Hempel, R. Herzog, I. Ilyashenko, S. Janos, L. Jungermann, V. Kalesinskas, J. Kapturauskas, R. Laiho, Z. Li, P. Luukka, I. Mandic, R. De Masi, D. Menichelli, M. Mikuz, O. Militaru, T. O. Niinikoski, G. Nuessle, V. O'Shea, S. Pagano, S. Paul, B. Perea Solano, K. Piotrzkowski, S. Pirollo, K. Pretzl, M. Rahman, P. Rato Mendes, X. Rouby, G. Ruggiero, K. Smith, P. Sousa, E. Tuominen, E. Tuoyinen, J. Vaitkus, E. Verbitskaya, C. Da Viá, L. Vlasenko, M. Vlasenko, E. Wobst, M. Zavrtanik
  • University of Helsinki
  • CERN
  • Laboratório de Instrumentação e Física Experimental de Partículas
  • Vilnius University
  • University of Naples Federico II
  • Karlsruhe Institute of Technology
  • University of Florence
  • University of Bern
  • Brookhaven National Laboratory
  • Jožef Stefan Institute
  • Ioffe Physical Technical Institute
  • Brunel University London
  • University of Geneva
  • Technische Universität Dresden
  • University of Turku
  • Technical University of Munich
  • Université catholique de Louvain
  • University of Glasgow

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

The CERN RD39 Collaboration is developing super-radiation hard cryogenic Si detectors for applications in experiments of the LHC and the future LHC Upgrade. Radiation hardness up to the fluence of 1016n eq/cm2 is required in the future experiments. Significant improvement in the radiation hardness of silicon sensors has taken place during the past years. However, 1016 neq/cm2 is well beyond the radiation tolerance of even the most advanced semiconductor detectors made by commonly adopted technologies. Furthermore, at this radiation load the carrier trapping will limit the charge collection depth to the range of 20-30 μm regardless of the depletion depth. The key of our approach is freezing the trapping that affects Charge Collection Efficiency (CCE).

Original languageEnglish
Pages (from-to)384-388
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, A
Volume535
Issue number1-2
DOIs
StatePublished - Dec 11 2004
EventProceedings of the 10th International Viennna Conference - Vienna, Austria
Duration: Feb 16 2004Feb 21 2004

Keywords

  • Material engineering
  • Radiation hardness
  • Si particle detectors

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