Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures

D. Donetsky; S. Anikeev; G. Belenky; S. Luryi; C. A. Wang; G. Nichols

doi:10.1063/1.1530743

Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures

D. Donetsky
, S. Anikeev
, G. Belenky
, S. Luryi
, C. A. Wang
, G. Nichols

Electrical Engineering

Stony Brook University
Massachusetts Institute of Technology
Lockheed Martin

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The minority carrier lifetimes in 0.55 eV band-gap GaInAsSb epitaxial layers were determined. It was found that interfacial recombination is sensitive to the doping level in p-GaSb cap layers. It was also found that heavily doped p-GaSb cap layer is effective in reducing the recombination velocity at the GaSb/GaInAsSb interface.

Original language	English
Pages (from-to)	4769-4771
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	25
DOIs	https://doi.org/10.1063/1.1530743
State	Published - Dec 16 2003

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10.1063/1.1530743

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title = "Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures",

abstract = "The minority carrier lifetimes in 0.55 eV band-gap GaInAsSb epitaxial layers were determined. It was found that interfacial recombination is sensitive to the doping level in p-GaSb cap layers. It was also found that heavily doped p-GaSb cap layer is effective in reducing the recombination velocity at the GaSb/GaInAsSb interface.",

author = "D. Donetsky and S. Anikeev and G. Belenky and S. Luryi and Wang, \{C. A.\} and G. Nichols",

year = "2003",

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journal = "Applied Physics Letters",

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T1 - Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures

AU - Donetsky, D.

AU - Anikeev, S.

AU - Belenky, G.

AU - Luryi, S.

AU - Wang, C. A.

AU - Nichols, G.

PY - 2003/12/16

Y1 - 2003/12/16

N2 - The minority carrier lifetimes in 0.55 eV band-gap GaInAsSb epitaxial layers were determined. It was found that interfacial recombination is sensitive to the doping level in p-GaSb cap layers. It was also found that heavily doped p-GaSb cap layer is effective in reducing the recombination velocity at the GaSb/GaInAsSb interface.

AB - The minority carrier lifetimes in 0.55 eV band-gap GaInAsSb epitaxial layers were determined. It was found that interfacial recombination is sensitive to the doping level in p-GaSb cap layers. It was also found that heavily doped p-GaSb cap layer is effective in reducing the recombination velocity at the GaSb/GaInAsSb interface.

UR - https://www.scopus.com/pages/publications/0037449290

U2 - 10.1063/1.1530743

DO - 10.1063/1.1530743

M3 - Article

AN - SCOPUS:0037449290

SN - 0003-6951

VL - 81

SP - 4769

EP - 4771

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures

Abstract

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