Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures

E. E. Mendez; L. Esaki; W. I. Wang

doi:10.1103/PhysRevB.33.2893

Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures

E. E. Mendez
, L. Esaki
, W. I. Wang

Physics and Astronomy

IBM

Research output: Contribution to journal › Article › peer-review

175 Scopus citations

Abstract

We report the observation of resonant tunneling of electrons through Landau levels in double-barrier GaAlAs-GaAs-GaAlAs heterostructures, in the presence of a strong magnetic field perpendicular to the interfaces. This is a two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined.

Original language	English
Pages (from-to)	2893-2896
Number of pages	4
Journal	Physical Review B
Volume	33
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.33.2893
State	Published - 1986

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title = "Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures",

abstract = "We report the observation of resonant tunneling of electrons through Landau levels in double-barrier GaAlAs-GaAs-GaAlAs heterostructures, in the presence of a strong magnetic field perpendicular to the interfaces. This is a two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined.",

author = "Mendez, \{E. E.\} and L. Esaki and Wang, \{W. I.\}",

year = "1986",

doi = "10.1103/PhysRevB.33.2893",

language = "English",

volume = "33",

pages = "2893--2896",

journal = "Physical Review B",

issn = "0163-1829",

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T1 - Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures

AU - Mendez, E. E.

AU - Esaki, L.

AU - Wang, W. I.

PY - 1986

Y1 - 1986

N2 - We report the observation of resonant tunneling of electrons through Landau levels in double-barrier GaAlAs-GaAs-GaAlAs heterostructures, in the presence of a strong magnetic field perpendicular to the interfaces. This is a two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined.

AB - We report the observation of resonant tunneling of electrons through Landau levels in double-barrier GaAlAs-GaAs-GaAlAs heterostructures, in the presence of a strong magnetic field perpendicular to the interfaces. This is a two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined.

UR - https://www.scopus.com/pages/publications/0000119316

U2 - 10.1103/PhysRevB.33.2893

DO - 10.1103/PhysRevB.33.2893

M3 - Article

AN - SCOPUS:0000119316

SN - 0163-1829

VL - 33

SP - 2893

EP - 2896

JO - Physical Review B

JF - Physical Review B

IS - 4

ER -

Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures

Abstract

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