Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures

A. Zaslavsky; V. J. Goldman; D. C. Tsui; J. E. Cunningham

doi:10.1063/1.99956

Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures

A. Zaslavsky
, V. J. Goldman
, D. C. Tsui
, J. E. Cunningham

Physics and Astronomy

Princeton University
Nokia

Research output: Contribution to journal › Article › peer-review

125 Scopus citations

Abstract

We report measurements of the current-voltage characteristics of an asymmetric GaAs/AlGaAs double-barrier resonant tunneling device. The structure was designed to increase the space charge in the well under forward bias and consequently enhance the electrostatic feedback that leads to intrinsic bistability. The magnetotunneling data demonstrate unambiguously that the observed bistability is the property of the device, rather than the biasing circuit.

Original language	English
Pages (from-to)	1408-1410
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	15
DOIs	https://doi.org/10.1063/1.99956
State	Published - 1988

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title = "Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures",

abstract = "We report measurements of the current-voltage characteristics of an asymmetric GaAs/AlGaAs double-barrier resonant tunneling device. The structure was designed to increase the space charge in the well under forward bias and consequently enhance the electrostatic feedback that leads to intrinsic bistability. The magnetotunneling data demonstrate unambiguously that the observed bistability is the property of the device, rather than the biasing circuit.",

author = "A. Zaslavsky and Goldman, \{V. J.\} and Tsui, \{D. C.\} and Cunningham, \{J. E.\}",

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AU - Zaslavsky, A.

AU - Goldman, V. J.

AU - Tsui, D. C.

AU - Cunningham, J. E.

PY - 1988

Y1 - 1988

N2 - We report measurements of the current-voltage characteristics of an asymmetric GaAs/AlGaAs double-barrier resonant tunneling device. The structure was designed to increase the space charge in the well under forward bias and consequently enhance the electrostatic feedback that leads to intrinsic bistability. The magnetotunneling data demonstrate unambiguously that the observed bistability is the property of the device, rather than the biasing circuit.

AB - We report measurements of the current-voltage characteristics of an asymmetric GaAs/AlGaAs double-barrier resonant tunneling device. The structure was designed to increase the space charge in the well under forward bias and consequently enhance the electrostatic feedback that leads to intrinsic bistability. The magnetotunneling data demonstrate unambiguously that the observed bistability is the property of the device, rather than the biasing circuit.

UR - https://www.scopus.com/pages/publications/36549092876

U2 - 10.1063/1.99956

DO - 10.1063/1.99956

M3 - Article

AN - SCOPUS:36549092876

SN - 0003-6951

VL - 53

SP - 1408

EP - 1410

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures

Abstract

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