Resonant tunneling via Landau levels in GaAs-Ga1-xAlxAs heterostructures

C. E.T. Gonçalves Da Silva; E. E. Mendez

doi:10.1103/PhysRevB.38.3994

Resonant tunneling via Landau levels in GaAs-Ga1-xAlxAs heterostructures

C. E.T. Gonçalves Da Silva
, E. E. Mendez

Physics and Astronomy

Universidade Estadual de Campinas

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We have calculated, within the effective-mass approximation, the current-voltage characteristics for resonant tunneling through a Ga1-xAlxAs-GaAs-Ga1-xAlxAs heterostructure in the presence of a magnetic field applied perpendicular to the interfaces. We find qualitative agreement between the theoretical results and measurements performed on a 100 Aiš40 Aiš100 Ga0.6Al0.4As-GaAs-Ga0.6Al0.4As heterostructure in magnetic fields up to 15 T. Quantitative discrepancies between theory and experiment point out the need for a more complete treatment of resonant tunneling phenomena.

Original language	English
Pages (from-to)	3994-3997
Number of pages	4
Journal	Physical Review B
Volume	38
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.38.3994
State	Published - 1988

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title = "Resonant tunneling via Landau levels in GaAs-Ga1-xAlxAs heterostructures",

abstract = "We have calculated, within the effective-mass approximation, the current-voltage characteristics for resonant tunneling through a Ga1-xAlxAs-GaAs-Ga1-xAlxAs heterostructure in the presence of a magnetic field applied perpendicular to the interfaces. We find qualitative agreement between the theoretical results and measurements performed on a 100 Ai{\v s}40 Ai{\v s}100 Ga0.6Al0.4As-GaAs-Ga0.6Al0.4As heterostructure in magnetic fields up to 15 T. Quantitative discrepancies between theory and experiment point out the need for a more complete treatment of resonant tunneling phenomena.",

author = "\{Gon{\c c}alves Da Silva\}, \{C. E.T.\} and Mendez, \{E. E.\}",

year = "1988",

doi = "10.1103/PhysRevB.38.3994",

language = "English",

volume = "38",

pages = "3994--3997",

journal = "Physical Review B",

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T1 - Resonant tunneling via Landau levels in GaAs-Ga1-xAlxAs heterostructures

AU - Gonçalves Da Silva, C. E.T.

AU - Mendez, E. E.

PY - 1988

Y1 - 1988

N2 - We have calculated, within the effective-mass approximation, the current-voltage characteristics for resonant tunneling through a Ga1-xAlxAs-GaAs-Ga1-xAlxAs heterostructure in the presence of a magnetic field applied perpendicular to the interfaces. We find qualitative agreement between the theoretical results and measurements performed on a 100 Aiš40 Aiš100 Ga0.6Al0.4As-GaAs-Ga0.6Al0.4As heterostructure in magnetic fields up to 15 T. Quantitative discrepancies between theory and experiment point out the need for a more complete treatment of resonant tunneling phenomena.

AB - We have calculated, within the effective-mass approximation, the current-voltage characteristics for resonant tunneling through a Ga1-xAlxAs-GaAs-Ga1-xAlxAs heterostructure in the presence of a magnetic field applied perpendicular to the interfaces. We find qualitative agreement between the theoretical results and measurements performed on a 100 Aiš40 Aiš100 Ga0.6Al0.4As-GaAs-Ga0.6Al0.4As heterostructure in magnetic fields up to 15 T. Quantitative discrepancies between theory and experiment point out the need for a more complete treatment of resonant tunneling phenomena.

UR - https://www.scopus.com/pages/publications/24544465830

U2 - 10.1103/PhysRevB.38.3994

DO - 10.1103/PhysRevB.38.3994

M3 - Article

AN - SCOPUS:24544465830

SN - 0163-1829

VL - 38

SP - 3994

EP - 3997

JO - Physical Review B

JF - Physical Review B

IS - 6

ER -

Resonant tunneling via Landau levels in GaAs-Ga1-xAlxAs heterostructures

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