Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures

E. E. Mendez; W. I. Wang; E. Calleja; C. E.T. Gonçalves Da Silva

doi:10.1063/1.97878

Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures

E. E. Mendez
, W. I. Wang
, E. Calleja
, C. E.T. Gonçalves Da Silva

Physics and Astronomy

IBM

Research output: Contribution to journal › Article › peer-review

97 Scopus citations

Abstract

We have observed resonant tunneling of electrons in AlAs-GaAs-AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current-voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.

Original language	English
Pages (from-to)	1263-1265
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	18
DOIs	https://doi.org/10.1063/1.97878
State	Published - 1987

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title = "Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures",

abstract = "We have observed resonant tunneling of electrons in AlAs-GaAs-AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current-voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.",

author = "Mendez, \{E. E.\} and Wang, \{W. I.\} and E. Calleja and \{Gon{\c c}alves Da Silva\}, \{C. E.T.\}",

year = "1987",

doi = "10.1063/1.97878",

language = "English",

volume = "50",

pages = "1263--1265",

journal = "Applied Physics Letters",

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T1 - Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures

AU - Mendez, E. E.

AU - Wang, W. I.

AU - Calleja, E.

AU - Gonçalves Da Silva, C. E.T.

PY - 1987

Y1 - 1987

N2 - We have observed resonant tunneling of electrons in AlAs-GaAs-AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current-voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.

AB - We have observed resonant tunneling of electrons in AlAs-GaAs-AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current-voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.

UR - https://www.scopus.com/pages/publications/0000473569

U2 - 10.1063/1.97878

DO - 10.1063/1.97878

M3 - Article

AN - SCOPUS:0000473569

SN - 0003-6951

VL - 50

SP - 1263

EP - 1265

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures

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