TY - GEN
T1 - Reverse Voltage Blocking Switches Using Paralleled GaN Devices for Current Source Inverter Applications
AU - Mustafeez-Ul-Hassan,
AU - Wu, Yuxuan
AU - Li, Yang
AU - Muneeb, Abdul
AU - Luo, Fang
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Reverse voltage blocking devices (RVB) find their applications in many converters including current source inverters (CSI). Being commercially unavailable, two devices can be connected in anti-series to make a RVB. To increase the current carrying capability, two/multiple devices can be paralleled which makes the dynamic current sharing difficult because of layout mismatches. This becomes more critical when involving GaN based devices as they are layout sensitive devices. This paper designs a 120 A RVB device by using four GaN devices. It has been shown that the paralleled devices experience almost similar gate and drain voltages when operated until 400 V, enabling equal dynamic current sharing. The resulting device was configured in a CSI where an existing double pulse test (DPT) was modified to identify the role of passive phase onto the performance of the switching devices. The paper quantified the error in switching energies to be around 7 % while including the passive phase. In the end, the developed RVB switches were used to develop a three phase current source inverter which was operated continuously to show output during RVB as well as bidirectional operating modes.
AB - Reverse voltage blocking devices (RVB) find their applications in many converters including current source inverters (CSI). Being commercially unavailable, two devices can be connected in anti-series to make a RVB. To increase the current carrying capability, two/multiple devices can be paralleled which makes the dynamic current sharing difficult because of layout mismatches. This becomes more critical when involving GaN based devices as they are layout sensitive devices. This paper designs a 120 A RVB device by using four GaN devices. It has been shown that the paralleled devices experience almost similar gate and drain voltages when operated until 400 V, enabling equal dynamic current sharing. The resulting device was configured in a CSI where an existing double pulse test (DPT) was modified to identify the role of passive phase onto the performance of the switching devices. The paper quantified the error in switching energies to be around 7 % while including the passive phase. In the end, the developed RVB switches were used to develop a three phase current source inverter which was operated continuously to show output during RVB as well as bidirectional operating modes.
UR - https://www.scopus.com/pages/publications/85182952135
U2 - 10.1109/ECCE53617.2023.10362240
DO - 10.1109/ECCE53617.2023.10362240
M3 - Conference contribution
AN - SCOPUS:85182952135
T3 - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
SP - 6510
EP - 6515
BT - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
Y2 - 29 October 2023 through 2 November 2023
ER -