Review on the development of cryogenic silicon detectors

L. Casagrande; M. C. Abreu; W. H. Bell; P. Berglund; W. De Boer; K. Borer; S. Buontempo; S. Chapuy; V. Cindro; N. D'Ambrosio; C. Da Viá; S. Devine; B. Dezillie; Z. Dimcovski; V. Eremin; A. Esposito; V. Granata; E. Grigoriev; F. Hauler; E. Heijne; S. Heising; S. Janos; L. Jungermann; I. Konorov; Z. Li; C. Lourenco; M. Mikuz; T. O. Niinikoski; V. O'Shea; S. Pagano; V. G. Palmieri; S. Paul; K. Pretzl; P. Rato; G. Ruggiero; K. Smith; P. Sonderegger; P. Sousa; E. Verbitskaya; S. Watts; M. Zavrtanik

doi:10.1016/S0168-9002(00)01192-X

Review on the development of cryogenic silicon detectors

L. Casagrande
, M. C. Abreu
, W. H. Bell
, P. Berglund
, W. De Boer
, K. Borer
, S. Buontempo
, S. Chapuy
, V. Cindro
, N. D'Ambrosio
, C. Da Viá
, S. Devine
, B. Dezillie
, Z. Dimcovski
, V. Eremin
, A. Esposito
, V. Granata
, E. Grigoriev
, F. Hauler
, E. Heijne

S. Heising, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenco, M. Mikuz, T. O. Niinikoski, V. O'Shea, S. Pagano, V. G. Palmieri, S. Paul, K. Pretzl, P. Rato, G. Ruggiero, K. Smith, P. Sonderegger, P. Sousa, E. Verbitskaya, S. Watts, M. Zavrtanik

Physics and Astronomy

CERN
Laboratório de Instrumentação e Física Experimental de Partículas
University of Glasgow
Aalto University
Karlsruhe Institute of Technology
University of Bern
University of Naples Federico II
University of Geneva
JSI
Brookhaven National Laboratory
Ioffe Physical Technical Institute
Technical University of Munich
Brunel University London

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400μm thick "double-p" silicon detector irradiated up to 1×10¹⁵n/cm² delivers a mip signal of about 27000 electrons when operated at 130K and 500V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detector during operation in the cold are also discussed.

Original language	English
Pages (from-to)	150-154
Number of pages	5
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	461
Issue number	1-3
DOIs	https://doi.org/10.1016/S0168-9002(00)01192-X
State	Published - Apr 1 2001

Keywords

Cryogenic
Detectors
Lazarus
Silicon

Access to Document

10.1016/S0168-9002(00)01192-X

Cite this

Casagrande, L., Abreu, M. C., Bell, W. H., Berglund, P., De Boer, W., Borer, K., Buontempo, S., Chapuy, S., Cindro, V., D'Ambrosio, N., Da Viá, C., Devine, S., Dezillie, B., Dimcovski, Z., Eremin, V., Esposito, A., Granata, V., Grigoriev, E., Hauler, F., ... Zavrtanik, M. (2001). Review on the development of cryogenic silicon detectors. Nuclear Inst. and Methods in Physics Research, A, 461(1-3), 150-154. https://doi.org/10.1016/S0168-9002(00)01192-X

@article{20e2fb6cb94547c4864c98968cabeb06,

title = "Review on the development of cryogenic silicon detectors",

abstract = "In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400μm thick {"}double-p{"} silicon detector irradiated up to 1×1015n/cm2 delivers a mip signal of about 27000 electrons when operated at 130K and 500V bias. The position resolution of an irradiated microstrip detector, and {"}in situ{"} irradiation of a pad detector during operation in the cold are also discussed.",

keywords = "Cryogenic, Detectors, Lazarus, Silicon",

author = "L. Casagrande and Abreu, \{M. C.\} and Bell, \{W. H.\} and P. Berglund and \{De Boer\}, W. and K. Borer and S. Buontempo and S. Chapuy and V. Cindro and N. D'Ambrosio and \{Da Vi{\'a}\}, C. and S. Devine and B. Dezillie and Z. Dimcovski and V. Eremin and A. Esposito and V. Granata and E. Grigoriev and F. Hauler and E. Heijne and S. Heising and S. Janos and L. Jungermann and I. Konorov and Z. Li and C. Lourenco and M. Mikuz and Niinikoski, \{T. O.\} and V. O'Shea and S. Pagano and Palmieri, \{V. G.\} and S. Paul and K. Pretzl and P. Rato and G. Ruggiero and K. Smith and P. Sonderegger and P. Sousa and E. Verbitskaya and S. Watts and M. Zavrtanik",

year = "2001",

month = apr,

day = "1",

doi = "10.1016/S0168-9002(00)01192-X",

language = "English",

volume = "461",

pages = "150--154",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

number = "1-3",

}

Casagrande, L, Abreu, MC, Bell, WH, Berglund, P, De Boer, W, Borer, K, Buontempo, S, Chapuy, S, Cindro, V, D'Ambrosio, N, Da Viá, C, Devine, S, Dezillie, B, Dimcovski, Z, Eremin, V, Esposito, A, Granata, V, Grigoriev, E, Hauler, F, Heijne, E, Heising, S, Janos, S, Jungermann, L, Konorov, I, Li, Z, Lourenco, C, Mikuz, M, Niinikoski, TO, O'Shea, V, Pagano, S, Palmieri, VG, Paul, S, Pretzl, K, Rato, P, Ruggiero, G, Smith, K, Sonderegger, P, Sousa, P, Verbitskaya, E, Watts, S & Zavrtanik, M 2001, 'Review on the development of cryogenic silicon detectors', Nuclear Inst. and Methods in Physics Research, A, vol. 461, no. 1-3, pp. 150-154. https://doi.org/10.1016/S0168-9002(00)01192-X

TY - JOUR

T1 - Review on the development of cryogenic silicon detectors

AU - Casagrande, L.

AU - Abreu, M. C.

AU - Bell, W. H.

AU - Berglund, P.

AU - De Boer, W.

AU - Borer, K.

AU - Buontempo, S.

AU - Chapuy, S.

AU - Cindro, V.

AU - D'Ambrosio, N.

AU - Da Viá, C.

AU - Devine, S.

AU - Dezillie, B.

AU - Dimcovski, Z.

AU - Eremin, V.

AU - Esposito, A.

AU - Granata, V.

AU - Grigoriev, E.

AU - Hauler, F.

AU - Heijne, E.

AU - Heising, S.

AU - Janos, S.

AU - Jungermann, L.

AU - Konorov, I.

AU - Li, Z.

AU - Lourenco, C.

AU - Mikuz, M.

AU - Niinikoski, T. O.

AU - O'Shea, V.

AU - Pagano, S.

AU - Palmieri, V. G.

AU - Paul, S.

AU - Pretzl, K.

AU - Rato, P.

AU - Ruggiero, G.

AU - Smith, K.

AU - Sonderegger, P.

AU - Sousa, P.

AU - Verbitskaya, E.

AU - Watts, S.

AU - Zavrtanik, M.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400μm thick "double-p" silicon detector irradiated up to 1×1015n/cm2 delivers a mip signal of about 27000 electrons when operated at 130K and 500V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detector during operation in the cold are also discussed.

AB - In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400μm thick "double-p" silicon detector irradiated up to 1×1015n/cm2 delivers a mip signal of about 27000 electrons when operated at 130K and 500V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detector during operation in the cold are also discussed.

KW - Cryogenic

KW - Detectors

KW - Lazarus

KW - Silicon

UR - https://www.scopus.com/pages/publications/0035305566

U2 - 10.1016/S0168-9002(00)01192-X

DO - 10.1016/S0168-9002(00)01192-X

M3 - Article

AN - SCOPUS:0035305566

SN - 0168-9002

VL - 461

SP - 150

EP - 154

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1-3

ER -

Review on the development of cryogenic silicon detectors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this