Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

J. G. Kim; L. Shterengas; R. U. Martinelli; G. L. Belenky; D. Z. Garbuzov; W. K. Chan

doi:10.1063/1.1517176

Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

J. G. Kim
, L. Shterengas
, R. U. Martinelli
, G. L. Belenky
, D. Z. Garbuzov
, W. K. Chan

Electrical Engineering

Sarnoff Corporation
Stony Brook University
Princeton Lightwave, Inc.

Research output: Contribution to journal › Article › peer-review

126 Scopus citations

Abstract

We have characterized 2.5-μm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well diode lasers that emit 1 W continuous waves from a 100-μm-wide aperture at a temperature of 12°C. The threshold current density is 250A/cm², and the external quantum efficiency near threshold is 0.36. The wall-plug efficiency reaches a maximum of 12% at a current of 2 A. Operating in the pulsed-current mode, the devices output nearly 5 W at 20°C. These lasers exhibit internal losses of about 4cm^-1 and differential series resistances of about 0.1 . A broad-waveguide design lowers internal losses, and highly doped transition regions between the cladding layers and the GaSb reduces series resistance.

Original language	English
Pages (from-to)	3146-3148
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	17
DOIs	https://doi.org/10.1063/1.1517176
State	Published - Oct 21 2002

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title = "Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves",

abstract = "We have characterized 2.5-μm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well diode lasers that emit 1 W continuous waves from a 100-μm-wide aperture at a temperature of 12°C. The threshold current density is 250A/cm2, and the external quantum efficiency near threshold is 0.36. The wall-plug efficiency reaches a maximum of 12\% at a current of 2 A. Operating in the pulsed-current mode, the devices output nearly 5 W at 20°C. These lasers exhibit internal losses of about 4cm-1 and differential series resistances of about 0.1 . A broad-waveguide design lowers internal losses, and highly doped transition regions between the cladding layers and the GaSb reduces series resistance.",

author = "Kim, \{J. G.\} and L. Shterengas and Martinelli, \{R. U.\} and Belenky, \{G. L.\} and Garbuzov, \{D. Z.\} and Chan, \{W. K.\}",

year = "2002",

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T1 - Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

AU - Kim, J. G.

AU - Shterengas, L.

AU - Martinelli, R. U.

AU - Belenky, G. L.

AU - Garbuzov, D. Z.

AU - Chan, W. K.

PY - 2002/10/21

Y1 - 2002/10/21

N2 - We have characterized 2.5-μm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well diode lasers that emit 1 W continuous waves from a 100-μm-wide aperture at a temperature of 12°C. The threshold current density is 250A/cm2, and the external quantum efficiency near threshold is 0.36. The wall-plug efficiency reaches a maximum of 12% at a current of 2 A. Operating in the pulsed-current mode, the devices output nearly 5 W at 20°C. These lasers exhibit internal losses of about 4cm-1 and differential series resistances of about 0.1 . A broad-waveguide design lowers internal losses, and highly doped transition regions between the cladding layers and the GaSb reduces series resistance.

AB - We have characterized 2.5-μm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well diode lasers that emit 1 W continuous waves from a 100-μm-wide aperture at a temperature of 12°C. The threshold current density is 250A/cm2, and the external quantum efficiency near threshold is 0.36. The wall-plug efficiency reaches a maximum of 12% at a current of 2 A. Operating in the pulsed-current mode, the devices output nearly 5 W at 20°C. These lasers exhibit internal losses of about 4cm-1 and differential series resistances of about 0.1 . A broad-waveguide design lowers internal losses, and highly doped transition regions between the cladding layers and the GaSb reduces series resistance.

UR - https://www.scopus.com/pages/publications/79956054825

U2 - 10.1063/1.1517176

DO - 10.1063/1.1517176

M3 - Article

AN - SCOPUS:79956054825

SN - 0003-6951

VL - 81

SP - 3146

EP - 3148

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

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