Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80 mW continuous-wave output power

L. Shterengas; G. Belenky; G. Kipshidze; T. Hosoda

doi:10.1063/1.2919720

Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80 mW continuous-wave output power

L. Shterengas
, G. Belenky
, G. Kipshidze
, T. Hosoda

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

High-power diode lasers with heavily strained In(Al)GaAsSb type-I quantum-well active regions emitting at 3.1 μm at room temperature are reported. The devices produce continuous-wave output powers above 200 mW at 250 K and 80 mW at 285 K.

Original language	English
Article number	171111
Journal	Applied Physics Letters
Volume	92
Issue number	17
DOIs	https://doi.org/10.1063/1.2919720
State	Published - 2008

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@article{86efef95d9ce4e6890f7cade634c1407,

title = "Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80 mW continuous-wave output power",

abstract = "High-power diode lasers with heavily strained In(Al)GaAsSb type-I quantum-well active regions emitting at 3.1 μm at room temperature are reported. The devices produce continuous-wave output powers above 200 mW at 250 K and 80 mW at 285 K.",

author = "L. Shterengas and G. Belenky and G. Kipshidze and T. Hosoda",

year = "2008",

doi = "10.1063/1.2919720",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80 mW continuous-wave output power

AU - Shterengas, L.

AU - Belenky, G.

AU - Kipshidze, G.

AU - Hosoda, T.

PY - 2008

Y1 - 2008

N2 - High-power diode lasers with heavily strained In(Al)GaAsSb type-I quantum-well active regions emitting at 3.1 μm at room temperature are reported. The devices produce continuous-wave output powers above 200 mW at 250 K and 80 mW at 285 K.

AB - High-power diode lasers with heavily strained In(Al)GaAsSb type-I quantum-well active regions emitting at 3.1 μm at room temperature are reported. The devices produce continuous-wave output powers above 200 mW at 250 K and 80 mW at 285 K.

UR - https://www.scopus.com/pages/publications/43049085499

U2 - 10.1063/1.2919720

DO - 10.1063/1.2919720

M3 - Article

AN - SCOPUS:43049085499

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171111

ER -

Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80 mW continuous-wave output power

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