TY - GEN
T1 - Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power
AU - Shterengas, L.
AU - Kipshidze, G.
AU - Hosoda, T.
AU - Donetsky, D.
AU - Belenky, G.
PY - 2008
Y1 - 2008
N2 - High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1μm at room temperature are reported. Devices operate in continuous-wave regime with output power above 200mW and 80mW at 250K and 285K, correspondingly.
AB - High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1μm at room temperature are reported. Devices operate in continuous-wave regime with output power above 200mW and 80mW at 250K and 285K, correspondingly.
UR - https://www.scopus.com/pages/publications/51349103108
U2 - 10.1109/CLEO.2008.4551812
DO - 10.1109/CLEO.2008.4551812
M3 - Conference contribution
AN - SCOPUS:51349103108
SN - 1557528594
SN - 9781557528599
T3 - 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
BT - 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
T2 - Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
Y2 - 4 May 2008 through 9 May 2008
ER -