@inproceedings{8cf655a558c849079818a526d7e36daf,
title = "Room temperature operated 3.1-μm Type-I GaSb-based diode lasers with 80mW continuous wave output power",
abstract = "High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1μm at room temperature are reported. Devices operate in continuous-wave regime with output power above 200mW and 80mW at 250K and 285K, correspondingly.",
author = "L. Shterengas and G. Kipshidze and T. Hosoda and D. Donetsky and G. Belenky",
year = "2008",
language = "English",
isbn = "9781557528599",
series = "Optics InfoBase Conference Papers",
publisher = "Optical Society of America",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2008",
note = "Conference on Lasers and Electro-Optics, CLEO 2008 ; Conference date: 04-05-2008 Through 09-05-2008",
}