Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

The ATLAS collaboration

doi:10.1088/1748-0221/19/10/P10008

Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

The ATLAS collaboration

Aix-Marseille Université
University of Bergen
University of Oklahoma
New York University Abu Dhabi
University of Göttingen
TU Dortmund University
United States Department of Energy
Southern Methodist University
Mohammed V University in Rabat
Tel Aviv University
Technion-Israel Institute of Technology
New York University
National Institute for Nuclear Physics
Abdus Salam International Centre for Theoretical Physics
King's College London
Heidelberg University
Université Savoie Mont Blanc
AGH University of Krakow
Brandeis University
University of Manchester
Northern Illinois University
Istanbul University
Rutherford Appleton Laboratory
University of California at Santa Cruz
The University of Chicago
Institute for High Energy Physics
University of Pavia
Johannes Gutenberg University Mainz
Alexandru Ioan Cuza University of Iaşi
Azerbaijan National Academy of Sciences
CERN
McGill University
Royal Holloway University of London
Zhengzhou University
University of Rome Tor Vergata
University of Valencia
University of Hassan II Casablanca
Lund University
Waseda University
University of Bonn
Bogazici University
Columbia University
University of Victoria BC

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb⁻¹ since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 10¹⁴ 1 MeV neutron-equivalent cm⁻² averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors’ response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments.

Original language	English
Journal	Journal of Instrumentation
Volume	19
Issue number	10
DOIs	https://doi.org/10.1088/1748-0221/19/10/P10008
State	Published - Oct 1 2024

Keywords

charge transport
Detector modelling and simulations II (electric fields
electron emission
etc); Particle tracking detectors (Solid-state detectors)
multiplication and induction
pulse formation

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10.1088/1748-0221/19/10/P10008

Cite this

@article{8b2cf2375a744db89f6076fb0d794b29,

title = "Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector",

abstract = "Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb−1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 1014 1 MeV neutron-equivalent cm−2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors{\textquoteright} response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments.",

keywords = "charge transport, Detector modelling and simulations II (electric fields, electron emission, etc); Particle tracking detectors (Solid-state detectors), multiplication and induction, pulse formation",

author = "\{The ATLAS collaboration\} and G. Aad and E. Aakvaag and B. Abbott and S. Abdelhameed and K. Abeling and Abicht, \{N. J.\} and Abidi, \{S. H.\} and M. Aboelela and A. Aboulhorma and H. Abramowicz and H. Abreu and Y. Abulaiti and Acharya, \{B. S.\} and A. Ackermann and \{Adam Bourdarios\}, C. and L. Adamczyk and Addepalli, \{S. V.\} and Addison, \{M. J.\} and J. Adelman and A. Adiguzel and T. Adye and Affolder, \{A. A.\} and Y. Afik and Agaras, \{M. N.\} and J. Agarwala and A. Aggarwal and C. Agheorghiesei and F. Ahmadov and Ahmed, \{W. S.\} and S. Ahuja and X. Ai and G. Aielli and A. Aikot and \{Ait Tamlihat\}, M. and B. Aitbenchikh and M. Akbiyik and {\AA}kesson, \{T. P.A.\} and Akimov, \{A. V.\} and D. Akiyama and Akolkar, \{N. N.\} and S. Aktas and \{Al Khoury\}, K. and Alberghi, \{G. L.\} and J. Albert and P. Albicocco and H. Arnold and V. Dao and J. Hobbs and J. Jia and D. Tsybychev",

year = "2024",

month = oct,

day = "1",

doi = "10.1088/1748-0221/19/10/P10008",

language = "English",

volume = "19",

journal = "Journal of Instrumentation",

issn = "1748-0221",

number = "10",

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TY - JOUR

T1 - Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

AU - The ATLAS collaboration

AU - Aad, G.

AU - Aakvaag, E.

AU - Abbott, B.

AU - Abdelhameed, S.

AU - Abeling, K.

AU - Abicht, N. J.

AU - Abidi, S. H.

AU - Aboelela, M.

AU - Aboulhorma, A.

AU - Abramowicz, H.

AU - Abreu, H.

AU - Abulaiti, Y.

AU - Acharya, B. S.

AU - Ackermann, A.

AU - Adam Bourdarios, C.

AU - Adamczyk, L.

AU - Addepalli, S. V.

AU - Addison, M. J.

AU - Adelman, J.

AU - Adiguzel, A.

AU - Adye, T.

AU - Affolder, A. A.

AU - Afik, Y.

AU - Agaras, M. N.

AU - Agarwala, J.

AU - Aggarwal, A.

AU - Agheorghiesei, C.

AU - Ahmadov, F.

AU - Ahmed, W. S.

AU - Ahuja, S.

AU - Ai, X.

AU - Aielli, G.

AU - Aikot, A.

AU - Ait Tamlihat, M.

AU - Aitbenchikh, B.

AU - Akbiyik, M.

AU - Åkesson, T. P.A.

AU - Akimov, A. V.

AU - Akiyama, D.

AU - Akolkar, N. N.

AU - Aktas, S.

AU - Al Khoury, K.

AU - Alberghi, G. L.

AU - Albert, J.

AU - Albicocco, P.

AU - Arnold, H.

AU - Dao, V.

AU - Hobbs, J.

AU - Jia, J.

AU - Tsybychev, D.

PY - 2024/10/1

Y1 - 2024/10/1

N2 - Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb−1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 1014 1 MeV neutron-equivalent cm−2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors’ response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments.

AB - Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb−1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 1014 1 MeV neutron-equivalent cm−2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors’ response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments.

KW - charge transport

KW - Detector modelling and simulations II (electric fields

KW - electron emission

KW - etc); Particle tracking detectors (Solid-state detectors)

KW - multiplication and induction

KW - pulse formation

UR - https://www.scopus.com/pages/publications/85206495952

U2 - 10.1088/1748-0221/19/10/P10008

DO - 10.1088/1748-0221/19/10/P10008

M3 - Article

AN - SCOPUS:85206495952

SN - 1748-0221

VL - 19

JO - Journal of Instrumentation

JF - Journal of Instrumentation

IS - 10

ER -

Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

Abstract

Keywords

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