Shot noise in negative-differential-conductance devices

W. Song; E. E. Mendez; V. Kuznetsov; B. Nielsen

doi:10.1063/1.1558953

Shot noise in negative-differential-conductance devices

W. Song
, E. E. Mendez
, V. Kuznetsov
, B. Nielsen

Physics and Astronomy

Stony Brook University

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The shot-noise properties of a double-barrier resonant-tunneling diode and a superlattice tunnel diode were compared. It was observed that the in the double-barrier diode, the reduction of shot noise to a value below that of a Poissonian distribution is due to the charge accumulated in the quantum well during the tunneling process. The energy profile of a superlattice tunnel diode, consisting of a wide potential barrier separating two identical doped superlattice was shown.

Original language	English
Pages (from-to)	1568-1570
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	10
DOIs	https://doi.org/10.1063/1.1558953
State	Published - Mar 10 2003

Access to Document

10.1063/1.1558953

Cite this

@article{09eb636f96794d159431238ab9298d6f,

title = "Shot noise in negative-differential-conductance devices",

abstract = "The shot-noise properties of a double-barrier resonant-tunneling diode and a superlattice tunnel diode were compared. It was observed that the in the double-barrier diode, the reduction of shot noise to a value below that of a Poissonian distribution is due to the charge accumulated in the quantum well during the tunneling process. The energy profile of a superlattice tunnel diode, consisting of a wide potential barrier separating two identical doped superlattice was shown.",

author = "W. Song and Mendez, \{E. E.\} and V. Kuznetsov and B. Nielsen",

year = "2003",

month = mar,

day = "10",

doi = "10.1063/1.1558953",

language = "English",

volume = "82",

pages = "1568--1570",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "10",

}

TY - JOUR

T1 - Shot noise in negative-differential-conductance devices

AU - Song, W.

AU - Mendez, E. E.

AU - Kuznetsov, V.

AU - Nielsen, B.

PY - 2003/3/10

Y1 - 2003/3/10

N2 - The shot-noise properties of a double-barrier resonant-tunneling diode and a superlattice tunnel diode were compared. It was observed that the in the double-barrier diode, the reduction of shot noise to a value below that of a Poissonian distribution is due to the charge accumulated in the quantum well during the tunneling process. The energy profile of a superlattice tunnel diode, consisting of a wide potential barrier separating two identical doped superlattice was shown.

AB - The shot-noise properties of a double-barrier resonant-tunneling diode and a superlattice tunnel diode were compared. It was observed that the in the double-barrier diode, the reduction of shot noise to a value below that of a Poissonian distribution is due to the charge accumulated in the quantum well during the tunneling process. The energy profile of a superlattice tunnel diode, consisting of a wide potential barrier separating two identical doped superlattice was shown.

UR - https://www.scopus.com/pages/publications/0037429865

U2 - 10.1063/1.1558953

DO - 10.1063/1.1558953

M3 - Article

AN - SCOPUS:0037429865

SN - 0003-6951

VL - 82

SP - 1568

EP - 1570

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Shot noise in negative-differential-conductance devices

Abstract

Access to Document

Other files and links

Fingerprint

Cite this