Silicon detectors irradiated "in situ" at cryogenic temperatures

G. Ruggiero; M. Abreu; W. Bell; P. Berglund; W. De Boer; K. Borer; S. Buontempo; L. Casagrande; S. Chapuy; V. Cindro; P. Collins; N. D'Ambrosio; C. Da Viá; S. R.H. Devine; B. Dezillie; Z. Dimcovski; V. Eremin; A. Esposito; V. Granata; E. Grigoriev; S. Grohmann; F. Hauler; E. Heijne; S. Heising; S. Janos; L. Jungermann; I. Konorov; Z. Li; C. Lourenço; M. Mikuz; T. O. Niinikoski; V. O'Shea; S. Pagano; V. G. Palmieri; S. Paul; K. Pretzl; P. Rato Mendes; K. Smith; P. Sonderegger; P. Sousa; E. Verbitskaya; S. Watts; M. Zavrtanik

doi:10.1016/S0168-9002(01)01645-X

Silicon detectors irradiated "in situ" at cryogenic temperatures

G. Ruggiero
, M. Abreu
, W. Bell
, P. Berglund
, W. De Boer
, K. Borer
, S. Buontempo
, L. Casagrande
, S. Chapuy
, V. Cindro
, P. Collins
, N. D'Ambrosio
, C. Da Viá
, S. R.H. Devine
, B. Dezillie
, Z. Dimcovski
, V. Eremin
, A. Esposito
, V. Granata
, E. Grigoriev

S. Grohmann, F. Hauler, E. Heijne, S. Heising, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenço, M. Mikuz, T. O. Niinikoski, V. O'Shea, S. Pagano, V. G. Palmieri, S. Paul, K. Pretzl, P. Rato Mendes, K. Smith, P. Sonderegger, P. Sousa, E. Verbitskaya, S. Watts, M. Zavrtanik

Physics and Astronomy

CERN
University of Glasgow
Laboratório de Instrumentação e Física Experimental de Partículas
Aalto University
Karlsruhe Institute of Technology
University of Bern
National Institute for Nuclear Physics
University of Geneva
Brunel University London
Brookhaven National Laboratory
Ioffe Physical Technical Institute
Technical University of Munich
Jožef Stefan Institute

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated "in situ" at low temperatures. In this work, effects of irradiation of 450GeV protons at 83K will be presented, showing that after a dose of 1.2×10¹⁵pcm^-2 a charge collection efficiency (CCE) of 55% is reached at 200V before the annealing. The same results were found at the end of the irradiation, after the sample has spent more then one year at room temperature. This shows that the CCE recovery by low temperature operation is not affected by the temperature of irradiation and by the reverse annealing.

Original language	English
Pages (from-to)	583-587
Number of pages	5
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	476
Issue number	3
DOIs	https://doi.org/10.1016/S0168-9002(01)01645-X
State	Published - Jan 11 2002
Event	Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) - Firenze, Italy Duration: Jun 28 2000 → Jun 30 2000

Keywords

Cryogenics
Silicon detectors

Access to Document

10.1016/S0168-9002(01)01645-X

Cite this

Ruggiero, G., Abreu, M., Bell, W., Berglund, P., De Boer, W., Borer, K., Buontempo, S., Casagrande, L., Chapuy, S., Cindro, V., Collins, P., D'Ambrosio, N., Da Viá, C., Devine, S. R. H., Dezillie, B., Dimcovski, Z., Eremin, V., Esposito, A., Granata, V., ... Zavrtanik, M. (2002). Silicon detectors irradiated "in situ" at cryogenic temperatures. Nuclear Inst. and Methods in Physics Research, A, 476(3), 583-587. https://doi.org/10.1016/S0168-9002(01)01645-X

@article{5f1f68982e35405c911bc33d80e9fc03,

title = "Silicon detectors irradiated {"}in situ{"} at cryogenic temperatures",

abstract = "Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated {"}in situ{"} at low temperatures. In this work, effects of irradiation of 450GeV protons at 83K will be presented, showing that after a dose of 1.2×1015pcm-2 a charge collection efficiency (CCE) of 55\% is reached at 200V before the annealing. The same results were found at the end of the irradiation, after the sample has spent more then one year at room temperature. This shows that the CCE recovery by low temperature operation is not affected by the temperature of irradiation and by the reverse annealing.",

keywords = "Cryogenics, Silicon detectors",

author = "G. Ruggiero and M. Abreu and W. Bell and P. Berglund and \{De Boer\}, W. and K. Borer and S. Buontempo and L. Casagrande and S. Chapuy and V. Cindro and P. Collins and N. D'Ambrosio and \{Da Vi{\'a}\}, C. and Devine, \{S. R.H.\} and B. Dezillie and Z. Dimcovski and V. Eremin and A. Esposito and V. Granata and E. Grigoriev and S. Grohmann and F. Hauler and E. Heijne and S. Heising and S. Janos and L. Jungermann and I. Konorov and Z. Li and C. Louren{\c c}o and M. Mikuz and Niinikoski, \{T. O.\} and V. O'Shea and S. Pagano and Palmieri, \{V. G.\} and S. Paul and K. Pretzl and Mendes, \{P. Rato\} and K. Smith and P. Sonderegger and P. Sousa and E. Verbitskaya and S. Watts and M. Zavrtanik",

year = "2002",

month = jan,

day = "11",

doi = "10.1016/S0168-9002(01)01645-X",

language = "English",

volume = "476",

pages = "583--587",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

number = "3",

note = "Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) ; Conference date: 28-06-2000 Through 30-06-2000",

}

Ruggiero, G, Abreu, M, Bell, W, Berglund, P, De Boer, W, Borer, K, Buontempo, S, Casagrande, L, Chapuy, S, Cindro, V, Collins, P, D'Ambrosio, N, Da Viá, C, Devine, SRH, Dezillie, B, Dimcovski, Z, Eremin, V, Esposito, A, Granata, V, Grigoriev, E, Grohmann, S, Hauler, F, Heijne, E, Heising, S, Janos, S, Jungermann, L, Konorov, I, Li, Z, Lourenço, C, Mikuz, M, Niinikoski, TO, O'Shea, V, Pagano, S, Palmieri, VG, Paul, S, Pretzl, K, Mendes, PR, Smith, K, Sonderegger, P, Sousa, P, Verbitskaya, E, Watts, S & Zavrtanik, M 2002, 'Silicon detectors irradiated "in situ" at cryogenic temperatures', Nuclear Inst. and Methods in Physics Research, A, vol. 476, no. 3, pp. 583-587. https://doi.org/10.1016/S0168-9002(01)01645-X

TY - JOUR

T1 - Silicon detectors irradiated "in situ" at cryogenic temperatures

AU - Ruggiero, G.

AU - Abreu, M.

AU - Bell, W.

AU - Berglund, P.

AU - De Boer, W.

AU - Borer, K.

AU - Buontempo, S.

AU - Casagrande, L.

AU - Chapuy, S.

AU - Cindro, V.

AU - Collins, P.

AU - D'Ambrosio, N.

AU - Da Viá, C.

AU - Devine, S. R.H.

AU - Dezillie, B.

AU - Dimcovski, Z.

AU - Eremin, V.

AU - Esposito, A.

AU - Granata, V.

AU - Grigoriev, E.

AU - Grohmann, S.

AU - Hauler, F.

AU - Heijne, E.

AU - Heising, S.

AU - Janos, S.

AU - Jungermann, L.

AU - Konorov, I.

AU - Li, Z.

AU - Lourenço, C.

AU - Mikuz, M.

AU - Niinikoski, T. O.

AU - O'Shea, V.

AU - Pagano, S.

AU - Palmieri, V. G.

AU - Paul, S.

AU - Pretzl, K.

AU - Mendes, P. Rato

AU - Smith, K.

AU - Sonderegger, P.

AU - Sousa, P.

AU - Verbitskaya, E.

AU - Watts, S.

AU - Zavrtanik, M.

PY - 2002/1/11

Y1 - 2002/1/11

N2 - Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated "in situ" at low temperatures. In this work, effects of irradiation of 450GeV protons at 83K will be presented, showing that after a dose of 1.2×1015pcm-2 a charge collection efficiency (CCE) of 55% is reached at 200V before the annealing. The same results were found at the end of the irradiation, after the sample has spent more then one year at room temperature. This shows that the CCE recovery by low temperature operation is not affected by the temperature of irradiation and by the reverse annealing.

AB - Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated "in situ" at low temperatures. In this work, effects of irradiation of 450GeV protons at 83K will be presented, showing that after a dose of 1.2×1015pcm-2 a charge collection efficiency (CCE) of 55% is reached at 200V before the annealing. The same results were found at the end of the irradiation, after the sample has spent more then one year at room temperature. This shows that the CCE recovery by low temperature operation is not affected by the temperature of irradiation and by the reverse annealing.

KW - Cryogenics

KW - Silicon detectors

UR - https://www.scopus.com/pages/publications/0037059377

U2 - 10.1016/S0168-9002(01)01645-X

DO - 10.1016/S0168-9002(01)01645-X

M3 - Conference article

AN - SCOPUS:0037059377

SN - 0168-9002

VL - 476

SP - 583

EP - 587

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 3

T2 - Proceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K)

Y2 - 28 June 2000 through 30 June 2000

ER -

Silicon detectors irradiated "in situ" at cryogenic temperatures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this