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Simulation, generation, and characterization of high brightness electron source at 1 GV/M gradient

  • T. Srinivasan-Rao
  • , J. Schill
  • , I. Ben-Zvi
  • , K. Batchelor
  • , J. P. Farrell
  • , J. Smedley
  • , X. E. Lin
  • , A. Odian
  • Brookhaven National Laboratory

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

This paper describes computer simulations and measurements on an electron bunch from a pulsed, high gradient gap. MAFIA and PBGUNS were used to calculate the emittance, brightness and energy spread of the electron beam for peak currents ranging from 10 A to 1 kA and pulse durations ranging from 0.3 ps to 10 ps. Under optimum conditions, normalized emittance of 10-7 pi m-rad, beam brightness of 3×1015 A/(m-rad)2 and energy spread of 0.15% were obtained. A pulsed high voltage with 1 MV amplitude, and approximately 1 ns duration was applied to the diode with an interelectrode gap ranging from 2 mm to 0.5 mm. Copper cathodes with three different surface preparations, diamond polished, diamond cut and chemically cleaned, have been tested for their voltage hold-off properties under this high gradient and the Fowler-Nordheim plots were generated. The diamond polished OFC class II copper was shown to consistently produce lower dark current and higher hold-off voltage. Photoemission studies have been made using light from a KrF excimer. The field enhancement factor for photoemission was calculated to be 5, an order of magnitude smaller than the dark current beta for a similar surface.

Original languageEnglish
Pages75-77
Number of pages3
StatePublished - 1999
EventThe 18th Biennial Particle Accelerator Conference - New York, NY, USA
Duration: Mar 27 1999Apr 2 1999

Conference

ConferenceThe 18th Biennial Particle Accelerator Conference
CityNew York, NY, USA
Period03/27/9904/2/99

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