Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC

Fangzhen Wu; Shayan Byrappa; Huanhuan Wang; Yi Chen; Balaji Raghothamachar; Michael Dudley; Edward K. Sanchez; Gil Chung; Darren Hansen; Stephan G. Mueller; Mark J. Loboda

doi:10.1557/opl.2012.1050

Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC

Fangzhen Wu
, Shayan Byrappa
, Huanhuan Wang
, Yi Chen
, Balaji Raghothamachar
, Michael Dudley
, Edward K. Sanchez
, Gil Chung
, Darren Hansen
, Stephan G. Mueller
, Mark J. Loboda

Materials Science and Engineering

Stony Brook University
Dow Chemical

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

19 Scopus citations

Abstract

Synchrotron X-ray topography (SXRT) of various geometries has been successfully utilized to image c+a dislocations in 4H-SiC crystals. Although molten potassium hydroxide(KOH) can be used to reveal the location of such dislocations, it is not possible to determine their senses or their Burgers vector magnitude. A simple, non-destructive method has been proposed to determine the Burgers vector of these c+a dislocations called the ray tracing simulation, which has been successfully implemented previously in revealing the dislocation sense and magnitude of micropipes, closed-core threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC In this paper, grazing incidence topography is performed using the monochromatic beam for the horizontally cut wafers to record pyramidal reflections of 11-28 type. Ray tracing simulation has been successfully implemented to correlate the simulated images with experimental images which are discussed in the paper.

Original language	English
Title of host publication	Silicon Carbide 2012 - Materials, Processing and Devices
Pages	41-46
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1050
State	Published - 2012
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 9 2012 → Apr 13 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1433
ISSN (Print)	0272-9172

Conference

Conference	2012 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	04/9/12 → 04/13/12

Access to Document

10.1557/opl.2012.1050

Cite this

Wu, F., Byrappa, S., Wang, H., Chen, Y., Raghothamachar, B., Dudley, M., Sanchez, E. K., Chung, G., Hansen, D., Mueller, S. G., & Loboda, M. J. (2012). Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC. In Silicon Carbide 2012 - Materials, Processing and Devices (pp. 41-46). (Materials Research Society Symposium Proceedings; Vol. 1433). https://doi.org/10.1557/opl.2012.1050

@inproceedings{1dd899b0f3e14ba5a7395e8d79288f54,

title = "Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC",

abstract = "Synchrotron X-ray topography (SXRT) of various geometries has been successfully utilized to image c+a dislocations in 4H-SiC crystals. Although molten potassium hydroxide(KOH) can be used to reveal the location of such dislocations, it is not possible to determine their senses or their Burgers vector magnitude. A simple, non-destructive method has been proposed to determine the Burgers vector of these c+a dislocations called the ray tracing simulation, which has been successfully implemented previously in revealing the dislocation sense and magnitude of micropipes, closed-core threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC In this paper, grazing incidence topography is performed using the monochromatic beam for the horizontally cut wafers to record pyramidal reflections of 11-28 type. Ray tracing simulation has been successfully implemented to correlate the simulated images with experimental images which are discussed in the paper.",

author = "Fangzhen Wu and Shayan Byrappa and Huanhuan Wang and Yi Chen and Balaji Raghothamachar and Michael Dudley and Sanchez, \{Edward K.\} and Gil Chung and Darren Hansen and Mueller, \{Stephan G.\} and Loboda, \{Mark J.\}",

year = "2012",

doi = "10.1557/opl.2012.1050",

language = "English",

isbn = "9781627482400",

series = "Materials Research Society Symposium Proceedings",

pages = "41--46",

booktitle = "Silicon Carbide 2012 - Materials, Processing and Devices",

note = "2012 MRS Spring Meeting ; Conference date: 09-04-2012 Through 13-04-2012",

}

Wu, F, Byrappa, S, Wang, H, Chen, Y, Raghothamachar, B , Dudley, M, Sanchez, EK, Chung, G, Hansen, D, Mueller, SG & Loboda, MJ 2012, Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC. in Silicon Carbide 2012 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 1433, pp. 41-46, 2012 MRS Spring Meeting, San Francisco, CA, United States, 04/9/12. https://doi.org/10.1557/opl.2012.1050

Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC. / Wu, Fangzhen; Byrappa, Shayan; Wang, Huanhuan et al.
Silicon Carbide 2012 - Materials, Processing and Devices. 2012. p. 41-46 (Materials Research Society Symposium Proceedings; Vol. 1433).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC

AU - Wu, Fangzhen

AU - Byrappa, Shayan

AU - Wang, Huanhuan

AU - Chen, Yi

AU - Raghothamachar, Balaji

AU - Dudley, Michael

AU - Sanchez, Edward K.

AU - Chung, Gil

AU - Hansen, Darren

AU - Mueller, Stephan G.

AU - Loboda, Mark J.

PY - 2012

Y1 - 2012

N2 - Synchrotron X-ray topography (SXRT) of various geometries has been successfully utilized to image c+a dislocations in 4H-SiC crystals. Although molten potassium hydroxide(KOH) can be used to reveal the location of such dislocations, it is not possible to determine their senses or their Burgers vector magnitude. A simple, non-destructive method has been proposed to determine the Burgers vector of these c+a dislocations called the ray tracing simulation, which has been successfully implemented previously in revealing the dislocation sense and magnitude of micropipes, closed-core threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC In this paper, grazing incidence topography is performed using the monochromatic beam for the horizontally cut wafers to record pyramidal reflections of 11-28 type. Ray tracing simulation has been successfully implemented to correlate the simulated images with experimental images which are discussed in the paper.

AB - Synchrotron X-ray topography (SXRT) of various geometries has been successfully utilized to image c+a dislocations in 4H-SiC crystals. Although molten potassium hydroxide(KOH) can be used to reveal the location of such dislocations, it is not possible to determine their senses or their Burgers vector magnitude. A simple, non-destructive method has been proposed to determine the Burgers vector of these c+a dislocations called the ray tracing simulation, which has been successfully implemented previously in revealing the dislocation sense and magnitude of micropipes, closed-core threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC In this paper, grazing incidence topography is performed using the monochromatic beam for the horizontally cut wafers to record pyramidal reflections of 11-28 type. Ray tracing simulation has been successfully implemented to correlate the simulated images with experimental images which are discussed in the paper.

UR - https://www.scopus.com/pages/publications/84879258749

U2 - 10.1557/opl.2012.1050

DO - 10.1557/opl.2012.1050

M3 - Conference contribution

AN - SCOPUS:84879258749

SN - 9781627482400

T3 - Materials Research Society Symposium Proceedings

SP - 41

EP - 46

BT - Silicon Carbide 2012 - Materials, Processing and Devices

T2 - 2012 MRS Spring Meeting

Y2 - 9 April 2012 through 13 April 2012

ER -

Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this