Single-electron quantization of electric field domains in slim semiconductor superlattices

A. N. Korotkov; D. V. Averin; K. K. Likharev

doi:10.1063/1.109100

Single-electron quantization of electric field domains in slim semiconductor superlattices

A. N. Korotkov
, D. V. Averin
, K. K. Likharev

Physics and Astronomy

Stony Brook University
Lomonosov Moscow State University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

It is shown that dc I-V curves of the semiconductor superlattices of small (practically, submicron) cross section should exhibit oscillations with the dc voltage period e/C, where C is the capacitance between adjacent conducting layers. These oscillations are due to the single-electron quantization of electric charge of the boundaries of static high-electric-field domains.

Original language	English
Pages (from-to)	3282-3284
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	25
DOIs	https://doi.org/10.1063/1.109100
State	Published - 1993

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title = "Single-electron quantization of electric field domains in slim semiconductor superlattices",

abstract = "It is shown that dc I-V curves of the semiconductor superlattices of small (practically, submicron) cross section should exhibit oscillations with the dc voltage period e/C, where C is the capacitance between adjacent conducting layers. These oscillations are due to the single-electron quantization of electric charge of the boundaries of static high-electric-field domains.",

author = "Korotkov, \{A. N.\} and Averin, \{D. V.\} and Likharev, \{K. K.\}",

year = "1993",

doi = "10.1063/1.109100",

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journal = "Applied Physics Letters",

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T1 - Single-electron quantization of electric field domains in slim semiconductor superlattices

AU - Korotkov, A. N.

AU - Averin, D. V.

AU - Likharev, K. K.

PY - 1993

Y1 - 1993

N2 - It is shown that dc I-V curves of the semiconductor superlattices of small (practically, submicron) cross section should exhibit oscillations with the dc voltage period e/C, where C is the capacitance between adjacent conducting layers. These oscillations are due to the single-electron quantization of electric charge of the boundaries of static high-electric-field domains.

AB - It is shown that dc I-V curves of the semiconductor superlattices of small (practically, submicron) cross section should exhibit oscillations with the dc voltage period e/C, where C is the capacitance between adjacent conducting layers. These oscillations are due to the single-electron quantization of electric charge of the boundaries of static high-electric-field domains.

UR - https://www.scopus.com/pages/publications/0041144482

U2 - 10.1063/1.109100

DO - 10.1063/1.109100

M3 - Article

AN - SCOPUS:0041144482

SN - 0003-6951

VL - 62

SP - 3282

EP - 3284

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Single-electron quantization of electric field domains in slim semiconductor superlattices

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