Single spatial mode 3μm diode lasers with continuous-wave output power of 15mW at room temperature

T. Hosoda; G. Kipshidze; L. Shterengas; G. Belenky

doi:10.1049/el.2011.3268

Single spatial mode 3μm diode lasers with continuous-wave output power of 15mW at room temperature

T. Hosoda
, G. Kipshidze
, L. Shterengas
, G. Belenky

Electrical Engineering

Stony Brook University
Power Photonic Corporation

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Single spatial mode GaSb-based type-I quantum well diode lasers with 3μm emission and continuous-wave output power above 15mW at room temperature are reported. The devices with 5.5μm-wide ridge waveguides were fabricated by selective wet etching technique.

Original language	English
Pages (from-to)	1341-1343
Number of pages	3
Journal	Electronics Letters
Volume	47
Issue number	24
DOIs	https://doi.org/10.1049/el.2011.3268
State	Published - Nov 24 2011

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title = "Single spatial mode 3μm diode lasers with continuous-wave output power of 15mW at room temperature",

abstract = "Single spatial mode GaSb-based type-I quantum well diode lasers with 3μm emission and continuous-wave output power above 15mW at room temperature are reported. The devices with 5.5μm-wide ridge waveguides were fabricated by selective wet etching technique.",

author = "T. Hosoda and G. Kipshidze and L. Shterengas and G. Belenky",

year = "2011",

month = nov,

day = "24",

doi = "10.1049/el.2011.3268",

language = "English",

volume = "47",

pages = "1341--1343",

journal = "Electronics Letters",

issn = "0013-5194",

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T1 - Single spatial mode 3μm diode lasers with continuous-wave output power of 15mW at room temperature

AU - Hosoda, T.

AU - Kipshidze, G.

AU - Shterengas, L.

AU - Belenky, G.

PY - 2011/11/24

Y1 - 2011/11/24

N2 - Single spatial mode GaSb-based type-I quantum well diode lasers with 3μm emission and continuous-wave output power above 15mW at room temperature are reported. The devices with 5.5μm-wide ridge waveguides were fabricated by selective wet etching technique.

AB - Single spatial mode GaSb-based type-I quantum well diode lasers with 3μm emission and continuous-wave output power above 15mW at room temperature are reported. The devices with 5.5μm-wide ridge waveguides were fabricated by selective wet etching technique.

UR - https://www.scopus.com/pages/publications/82055175950

U2 - 10.1049/el.2011.3268

DO - 10.1049/el.2011.3268

M3 - Article

AN - SCOPUS:82055175950

SN - 0013-5194

VL - 47

SP - 1341

EP - 1343

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Single spatial mode 3μm diode lasers with continuous-wave output power of 15mW at room temperature

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