TY - GEN
T1 - Solution growth and characterization of icosahedral boron arsenide (B 12As 2)
AU - Whiteley, C. E.
AU - Zhang, Y.
AU - Mayo, A.
AU - Edgar, J. H.
AU - Gong, Y.
AU - Kuball, M.
AU - Dudley, M.
PY - 2011
Y1 - 2011
N2 - The crystallographic properties of bulk icosahedral boron arsenide (B 12AS 2) crystals grown by precipitation from molten nickel solutions were characterized. Large crystals (5-8 mm) were produced by dissolving the boron in nickel at 1150°C for 48-72 hours, reacting with arsenic vapor, and slowly cooling to room temperature. The crystals varied in color from black and opaque to clear and transparent. Raman spectroscopy, x-ray topography (XRT), and defect selective etching revealed that the B 12As 2 single crystals were high quality with low dislocation densities. Furthermore, XRT results suggest that the major face of the plate-like crystals was (111) type, while (100), (010) and (001) type facets were also observed optically. The predominant defect in these crystals was edge character growth dislocations with a 〈001〉 Burgers vector, and 〈-110〉 line direction. In short, XRT characterization shows that solution growth is a viable method for producing good quality B 12As 2 crystals.
AB - The crystallographic properties of bulk icosahedral boron arsenide (B 12AS 2) crystals grown by precipitation from molten nickel solutions were characterized. Large crystals (5-8 mm) were produced by dissolving the boron in nickel at 1150°C for 48-72 hours, reacting with arsenic vapor, and slowly cooling to room temperature. The crystals varied in color from black and opaque to clear and transparent. Raman spectroscopy, x-ray topography (XRT), and defect selective etching revealed that the B 12As 2 single crystals were high quality with low dislocation densities. Furthermore, XRT results suggest that the major face of the plate-like crystals was (111) type, while (100), (010) and (001) type facets were also observed optically. The predominant defect in these crystals was edge character growth dislocations with a 〈001〉 Burgers vector, and 〈-110〉 line direction. In short, XRT characterization shows that solution growth is a viable method for producing good quality B 12As 2 crystals.
UR - https://www.scopus.com/pages/publications/84860158948
U2 - 10.1557/opl.2011.502
DO - 10.1557/opl.2011.502
M3 - Conference contribution
AN - SCOPUS:84860158948
SN - 9781618395146
T3 - Materials Research Society Symposium Proceedings
SP - 66
EP - 72
BT - Boron and Boron Compounds - From Fundamentals to Applications
T2 - 2010 MRS Fall Meeting
Y2 - 29 November 2010 through 3 December 2010
ER -