Some new applications of in-plane, shadow and reflection moité methods

F. P. Chiang; M. L. Du; I. M. Kao

doi:10.1117/12.323300

Some new applications of in-plane, shadow and reflection moité methods

F. P. Chiang
, M. L. Du
, I. M. Kao

Mechanical Engineering

Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

This paper describes some recent applications of the classical moiré methods. The first is the use of in-plane moiré method to monitor crack tip strain during cyclic loading. A new model predicting the crack growth rate using crack tip strain as a parameter is proposed. The second is the development of a modified shadow moiré method for mapping warpage of silicon wafers due to the presence of residual stress. Talbot effect is introduced to enhance the sensitivity of the shadow moiré method. The third example is the use of a modified reflection moiré method to monitor the quality of thin films deposited on substrates.

Original language	English
Pages (from-to)	104-109
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3407
DOIs	https://doi.org/10.1117/12.323300
State	Published - 1998
Event	International Conference on Applied Optical Metrology - Balatonfured, Hungary Duration: Jun 8 1998 → Jun 11 1998

Keywords

Aluminum alloy
Fatigue
Quality control
Silicon wafer
Strain
Thin film

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10.1117/12.323300

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@article{2797de9db94e41b08529330a9fad267f,

title = "Some new applications of in-plane, shadow and reflection moit{\'e} methods",

abstract = "This paper describes some recent applications of the classical moir{\'e} methods. The first is the use of in-plane moir{\'e} method to monitor crack tip strain during cyclic loading. A new model predicting the crack growth rate using crack tip strain as a parameter is proposed. The second is the development of a modified shadow moir{\'e} method for mapping warpage of silicon wafers due to the presence of residual stress. Talbot effect is introduced to enhance the sensitivity of the shadow moir{\'e} method. The third example is the use of a modified reflection moir{\'e} method to monitor the quality of thin films deposited on substrates.",

keywords = "Aluminum alloy, Fatigue, Quality control, Silicon wafer, Strain, Thin film",

author = "Chiang, \{F. P.\} and Du, \{M. L.\} and Kao, \{I. M.\}",

year = "1998",

doi = "10.1117/12.323300",

language = "English",

volume = "3407",

pages = "104--109",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "International Conference on Applied Optical Metrology ; Conference date: 08-06-1998 Through 11-06-1998",

}

TY - JOUR

T1 - Some new applications of in-plane, shadow and reflection moité methods

AU - Chiang, F. P.

AU - Du, M. L.

AU - Kao, I. M.

PY - 1998

Y1 - 1998

N2 - This paper describes some recent applications of the classical moiré methods. The first is the use of in-plane moiré method to monitor crack tip strain during cyclic loading. A new model predicting the crack growth rate using crack tip strain as a parameter is proposed. The second is the development of a modified shadow moiré method for mapping warpage of silicon wafers due to the presence of residual stress. Talbot effect is introduced to enhance the sensitivity of the shadow moiré method. The third example is the use of a modified reflection moiré method to monitor the quality of thin films deposited on substrates.

AB - This paper describes some recent applications of the classical moiré methods. The first is the use of in-plane moiré method to monitor crack tip strain during cyclic loading. A new model predicting the crack growth rate using crack tip strain as a parameter is proposed. The second is the development of a modified shadow moiré method for mapping warpage of silicon wafers due to the presence of residual stress. Talbot effect is introduced to enhance the sensitivity of the shadow moiré method. The third example is the use of a modified reflection moiré method to monitor the quality of thin films deposited on substrates.

KW - Aluminum alloy

KW - Fatigue

KW - Quality control

KW - Silicon wafer

KW - Strain

KW - Thin film

UR - https://www.scopus.com/pages/publications/0032224224

U2 - 10.1117/12.323300

DO - 10.1117/12.323300

M3 - Conference article

AN - SCOPUS:0032224224

SN - 0277-786X

VL - 3407

SP - 104

EP - 109

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - International Conference on Applied Optical Metrology

Y2 - 8 June 1998 through 11 June 1998

ER -

Some new applications of in-plane, shadow and reflection moité methods

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Keywords

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