Spin-Wave/Carrier-Wave Interactions

Bruce B. Robinson; Bayram Vural; Jayant P. Parekh

doi:10.1109/T-ED.1970.16958

Spin-Wave/Carrier-Wave Interactions

Bruce B. Robinson
, Bayram Vural
, Jayant P. Parekh

Electrical Engineering

Sarnoff Corporation
City University of New York

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The possibility of spin-wave/carrier-wave interactions has been considered with a more rigorous stability analysis than that used in previous studies. It is concluded that unstable bulk interactions in magnetic semiconductors will not be possible until resistivities are reduced to several orders of magnitude below those presently available. Composite YIG-InSb structures are potentially unstable at room temperature. The composite system can provide high-gain, slow-wave amplification at X-band with delay line capability (2300 dB/cm at 7.5 GHz). In a uniform magnetic field, the instability exhibits an exceedingly narrow bandwidth, 2.5 MHz, which would be a great disadvantage in any practical application as an amplifier. This could be offset somewhat, with a resulting loss of gain, by applying an inhomogeneous magnetic field.

Original language	English
Pages (from-to)	224-229
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	ED-17
Issue number	3
DOIs	https://doi.org/10.1109/T-ED.1970.16958
State	Published - Mar 1970

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10.1109/T-ED.1970.16958

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title = "Spin-Wave/Carrier-Wave Interactions",

abstract = "The possibility of spin-wave/carrier-wave interactions has been considered with a more rigorous stability analysis than that used in previous studies. It is concluded that unstable bulk interactions in magnetic semiconductors will not be possible until resistivities are reduced to several orders of magnitude below those presently available. Composite YIG-InSb structures are potentially unstable at room temperature. The composite system can provide high-gain, slow-wave amplification at X-band with delay line capability (2300 dB/cm at 7.5 GHz). In a uniform magnetic field, the instability exhibits an exceedingly narrow bandwidth, 2.5 MHz, which would be a great disadvantage in any practical application as an amplifier. This could be offset somewhat, with a resulting loss of gain, by applying an inhomogeneous magnetic field.",

author = "Robinson, \{Bruce B.\} and Bayram Vural and Parekh, \{Jayant P.\}",

year = "1970",

month = mar,

doi = "10.1109/T-ED.1970.16958",

language = "English",

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AU - Robinson, Bruce B.

AU - Vural, Bayram

AU - Parekh, Jayant P.

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N2 - The possibility of spin-wave/carrier-wave interactions has been considered with a more rigorous stability analysis than that used in previous studies. It is concluded that unstable bulk interactions in magnetic semiconductors will not be possible until resistivities are reduced to several orders of magnitude below those presently available. Composite YIG-InSb structures are potentially unstable at room temperature. The composite system can provide high-gain, slow-wave amplification at X-band with delay line capability (2300 dB/cm at 7.5 GHz). In a uniform magnetic field, the instability exhibits an exceedingly narrow bandwidth, 2.5 MHz, which would be a great disadvantage in any practical application as an amplifier. This could be offset somewhat, with a resulting loss of gain, by applying an inhomogeneous magnetic field.

AB - The possibility of spin-wave/carrier-wave interactions has been considered with a more rigorous stability analysis than that used in previous studies. It is concluded that unstable bulk interactions in magnetic semiconductors will not be possible until resistivities are reduced to several orders of magnitude below those presently available. Composite YIG-InSb structures are potentially unstable at room temperature. The composite system can provide high-gain, slow-wave amplification at X-band with delay line capability (2300 dB/cm at 7.5 GHz). In a uniform magnetic field, the instability exhibits an exceedingly narrow bandwidth, 2.5 MHz, which would be a great disadvantage in any practical application as an amplifier. This could be offset somewhat, with a resulting loss of gain, by applying an inhomogeneous magnetic field.

UR - https://www.scopus.com/pages/publications/0014749211

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DO - 10.1109/T-ED.1970.16958

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VL - ED-17

SP - 224

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Spin-Wave/Carrier-Wave Interactions

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