TY - GEN
T1 - Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures
AU - Mancini, Stephen A.
AU - Yup Jang, Seung
AU - Chen, Zeyu
AU - Kim, Dongyoung
AU - Lynch, Justin
AU - Liu, Yafei
AU - Raghothamachar, Balaji
AU - Kang, Minseok
AU - Agarwal, Anant
AU - Mahadik, Nadeemullah
AU - Stahlbush, Robert
AU - Dudley, Michael
AU - Sung, Woongje
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Several designs of 1.2kV-rated 4H-SiC PiN diodes and Junction Barrier Schottky (JBS) diodes have been successfully fabricated with various P+ implantation conditions resulting in different junction profiles. P+ regions were implanted at both room temperature and elevated temperature (600C) to monitor the generation of Basal Plane Dislocations (BPDs) and study their impact on device long term reliability. It was found that, when the dose in the deeper portion of the junction (implemented by high energy implantations) is well suppressed, static and long-term reliability performances of room temperature implanted devices can be maintained similar to those of high temperature implanted devices.
AB - Several designs of 1.2kV-rated 4H-SiC PiN diodes and Junction Barrier Schottky (JBS) diodes have been successfully fabricated with various P+ implantation conditions resulting in different junction profiles. P+ regions were implanted at both room temperature and elevated temperature (600C) to monitor the generation of Basal Plane Dislocations (BPDs) and study their impact on device long term reliability. It was found that, when the dose in the deeper portion of the junction (implemented by high energy implantations) is well suppressed, static and long-term reliability performances of room temperature implanted devices can be maintained similar to those of high temperature implanted devices.
KW - 4H-Silicon Carbide (SiC)
KW - Breakdown Voltage
KW - Current Stress
KW - Junction Barrier Schottky Diode
KW - Leakage Current
KW - PiN Diode
KW - Room Temperature Implantation
KW - X-Ray Topography
UR - https://www.scopus.com/pages/publications/85130733159
U2 - 10.1109/IRPS48227.2022.9764538
DO - 10.1109/IRPS48227.2022.9764538
M3 - Conference contribution
AN - SCOPUS:85130733159
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - P621-P626
BT - 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Reliability Physics Symposium, IRPS 2022
Y2 - 27 March 2022 through 31 March 2022
ER -