Structural and luminescent properties of bulk InAsSb

W. L. Sarney; S. P. Svensson; H. Hier; G. Kipshidze; D. Donetsky; D. Wang; L. Shterengas; G. Belenky

doi:10.1116/1.3670749

Structural and luminescent properties of bulk InAsSb

W. L. Sarney
, S. P. Svensson
, H. Hier
, G. Kipshidze
, D. Donetsky
, D. Wang
, L. Shterengas
, G. Belenky

Electrical Engineering

U.S. Army Research Laboratory
Stony Brook University

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The strong bandgap bowing in the InAs_xSb_1-x alloy system allows it to potentially be used for infrared photodetection in the middle and long wavelength range. The authors have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAs _xSb_1-x alloys and GaSb and InSb substrates in order to reach the long wave infrared range. In this work, we present the characterization of metamorphically grown InAs_xSb_1-x films that demonstrate strong photoluminescence in the spectral range from 5 to 9 m.

Original language	English
Article number	02B105
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1116/1.3670749
State	Published - Mar 2012

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10.1116/1.3670749

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AU - Sarney, W. L.

AU - Svensson, S. P.

AU - Hier, H.

AU - Kipshidze, G.

AU - Donetsky, D.

AU - Wang, D.

AU - Shterengas, L.

AU - Belenky, G.

PY - 2012/3

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N2 - The strong bandgap bowing in the InAsxSb1-x alloy system allows it to potentially be used for infrared photodetection in the middle and long wavelength range. The authors have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAs xSb1-x alloys and GaSb and InSb substrates in order to reach the long wave infrared range. In this work, we present the characterization of metamorphically grown InAsxSb1-x films that demonstrate strong photoluminescence in the spectral range from 5 to 9 m.

AB - The strong bandgap bowing in the InAsxSb1-x alloy system allows it to potentially be used for infrared photodetection in the middle and long wavelength range. The authors have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAs xSb1-x alloys and GaSb and InSb substrates in order to reach the long wave infrared range. In this work, we present the characterization of metamorphically grown InAsxSb1-x films that demonstrate strong photoluminescence in the spectral range from 5 to 9 m.

UR - https://www.scopus.com/pages/publications/84861619002

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DO - 10.1116/1.3670749

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JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 2

M1 - 02B105

ER -

Structural and luminescent properties of bulk InAsSb

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