Structural and optical characteristics of metamorphic bulk InAsSb

Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% and layer thicknesses up to 3 μm were grown by molecular beam epitaxy. The photoluminescence (PL) peak energy as low as 0.10 eV was demonstrated at T = 77 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures from T = 80 to 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.