@inproceedings{8766fddde0b14c848d347156d12bdd86,
title = "Studies of the distribution of elementary threading screw dislocations In 4H silicon carbide wafer",
abstract = "The density and sense distribution of elementary threading screw dislocations in a physical vapor transport grown 3-inch 4H silicon carbide wafer have been studied. The density of TSDs ranges between 1.6×10 3/cm2 and 7.1×103/cm2 and the lowest density is observed at positions approximately half radius off the wafer center. The dislocation sense of elementary threading screw dislocations can be readily revealed by the asymmetric contrast of their images in grazing-incidence x-ray topographs using pyramidal plane reflections. The circumferential and radial distributions of the sense of elementary threading screw dislocations have been studied and no clear trends are observed in either distribution.",
keywords = "Dislocation sense, Sense distribution, Threading screw dislocation",
author = "Yi Chen and Ning Zhang and Huang, \{Xian Rong\} and Black, \{David R.\} and Michael Dudley",
year = "2009",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "301--304",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}