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Sublimation growth and defect characterization of AlN single crystals

  • Fairfield Crystal Technology, LLC
  • Yale University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we report results from AlN single crystal growth experiments using a sublimation physical vapor transport growth technique. AlN single crystal boules up to 7mm in diameter were demonstrated. Characterization of polished AlN single crystal samples was carried out using various techniques, including synchrotron X-ray topography.

Original languageEnglish
Title of host publicationNitrides and Related Bulk Materials
Pages78-83
Number of pages6
StatePublished - 2008
Event2007 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 26 2007Nov 30 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1040
ISSN (Print)0272-9172

Conference

Conference2007 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period11/26/0711/30/07

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