Abstract
We report high-yield room-temperature growth of vertical single-crystalline bismuth nanowire array by vacuum thermal evaporation of bismuth over a choice of arbitrary substrate coated with a thin interlayer of nanoporous vanadium. The nanowire growth is the result of spontaneous and continuous expulsion of nanometer-sized bismuth domains from the vanadium pores, driven by their excessive surface energy that suppresses the melting point of bismuth close to room temperature. The simplicity of the technique opens a new avenue for the growth of nanowire arrays of a variety of materials.
| Original language | English |
|---|---|
| Pages (from-to) | 5630-5635 |
| Number of pages | 6 |
| Journal | Nano Letters |
| Volume | 14 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 8 2014 |
Keywords
- Bismuth nanowire
- single crystallinity
- surface energy
- thermal evaporation
- vanadium
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