Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

Michael Dudley; Franklin F.Y. Wang; Thomas Fanning; Georgios Tolis; Wu Jun; David T. Hodul

doi:10.1016/0167-577X(90)90037-M

Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

Michael Dudley
, Franklin F.Y. Wang
, Thomas Fanning
, Georgios Tolis
, Wu Jun
, David T. Hodul

Materials Science and Engineering

Stony Brook University
Varian Medical Systems

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Synchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single-crystal wafers, both prior and subsequent to a 60 s rapid thermal processing (RTP) treatment at 1050°C. Among the effects observed were: dislocation glide and multiplication; and the enhancement of the strain field associated with A-type swirl defects.

Original language	English
Pages (from-to)	87-92
Number of pages	6
Journal	Materials Letters
Volume	10
Issue number	3
DOIs	https://doi.org/10.1016/0167-577X(90)90037-M
State	Published - Oct 1990

Access to Document

10.1016/0167-577X(90)90037-M

Cite this

@article{bd78c6bc01f84e6e96fd7db09d98b74f,

title = "Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers",

abstract = "Synchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single-crystal wafers, both prior and subsequent to a 60 s rapid thermal processing (RTP) treatment at 1050°C. Among the effects observed were: dislocation glide and multiplication; and the enhancement of the strain field associated with A-type swirl defects.",

author = "Michael Dudley and Wang, \{Franklin F.Y.\} and Thomas Fanning and Georgios Tolis and Wu Jun and Hodul, \{David T.\}",

year = "1990",

month = oct,

doi = "10.1016/0167-577X(90)90037-M",

language = "English",

volume = "10",

pages = "87--92",

journal = "Materials Letters",

issn = "0167-577X",

number = "3",

}

TY - JOUR

T1 - Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

AU - Dudley, Michael

AU - Wang, Franklin F.Y.

AU - Fanning, Thomas

AU - Tolis, Georgios

AU - Jun, Wu

AU - Hodul, David T.

PY - 1990/10

Y1 - 1990/10

N2 - Synchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single-crystal wafers, both prior and subsequent to a 60 s rapid thermal processing (RTP) treatment at 1050°C. Among the effects observed were: dislocation glide and multiplication; and the enhancement of the strain field associated with A-type swirl defects.

AB - Synchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single-crystal wafers, both prior and subsequent to a 60 s rapid thermal processing (RTP) treatment at 1050°C. Among the effects observed were: dislocation glide and multiplication; and the enhancement of the strain field associated with A-type swirl defects.

UR - https://www.scopus.com/pages/publications/0025497153

U2 - 10.1016/0167-577X(90)90037-M

DO - 10.1016/0167-577X(90)90037-M

M3 - Article

AN - SCOPUS:0025497153

SN - 0167-577X

VL - 10

SP - 87

EP - 92

JO - Materials Letters

JF - Materials Letters

IS - 3

ER -

Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this