@inproceedings{ee872c925a4c4113b4e776a32a71e3a5,
title = "Synchrotron X-ray topography analysis of double shockley stacking faults in 4H-SiC wafers",
abstract = "Synchrotron white beam X-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentrations after the wafers have been subjected to heat treatment. The fault generation process is driven by the fact that in regions of higher doping concentrations, a faulted crystal containing double Shockley faults is more stable than perfect 4H–SiC crystal at the high temperatures (>1000 °C) that the wafers are subject to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults, and experimentally verified it by characterizing the configuration of the bounding partials of the stacking faults on both surfaces. Using high resolution transmission electron microscopy, we have verified that the enclosed stacking fault is a double Shockley type.",
keywords = "4H-SiC, Doping, Double shockley stacking faults, Heat treatment, X-ray topography",
author = "Yu Yang and Jianqiu Guo and Ouloide Goue and Balaji Raghothamachar and Michael Dudley and Gil Chung and Edward Sanchez and Jeff Quast and Ian Manning and Darren Hansen",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.105",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "105--108",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}