Skip to main navigation Skip to search Skip to main content

Synchrotron X-ray topography studies of the propagation and post-growth mutual interaction of threading growth dislocations with C-component of Burgers vector in PVT-Grown 4H-SiC

  • Fangzhen Wu
  • , Huanhuan Wang
  • , Shayan Byrappa
  • , Balaji Raghothamachar
  • , Michael Dudley
  • , Edward K. Sanchez
  • , Darren Hansen
  • , Roman Drachev
  • , Stephan G. Mueller
  • , Mark J. Loboda
  • Stony Brook University
  • Dow Chemical

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

25 Scopus citations

Abstract

Synchrotron White Beam X-ray Topography (SWBXT) imaging of wafers cut parallel to the growth axis from 4H-SiC boules grown using Physical Vapor Transport has enabled visualization of the evolution of the defect microstructure. Here we present observations of the propagation and post-growth mutual interaction of threading growth dislocations with C-component of Burgers vector. Detailed contrast extinction studies reveal the presence of two types of such dislocations: pure C-axis screw dislocations and those with Burgers Vector n1c+n2a [1], where n1 is equal to 1 and n 2 is equal to 1 or 2. In addition, observations of dislocation propagation show that some of the threading dislocations with C-component of Burgers adopt a curved, slightly helical morphology which can drive the dislocations from adjacent nucleation sites together enabling them to respond to the inter-dislocation forces and react. Since all of the dislocations exhibiting such helical configurations have significant screw component, and in view of the fact that such dislocations are typically not observed to glide, it is believed that such morphologies result in large part from the interaction of a non-equilibrium concentration of vacancies with the originally approximately straight dislocation cores behind growth front. Such interactions can lead to complete or partial Burgers vector annihilation. Among the reactions observed are: (a) the reaction between opposite-sign threading screw dislocations with Burgers vectors c and -c wherein some segments annihilate leaving others in the form of trails of stranded loops comprising closed dislocation dipoles; (b) the reaction between threading dislocations with Burgers vectors of -c+a and c+a wherein the opposite c-components annihilate leaving behind the two a-components; (c) the similar reaction between threading dislocations with Burgers vectors of -c and c+a leaving behind the a-component.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages343-346
Number of pages4
ISBN (Print)9783037854198
DOIs
StatePublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Country/TerritoryUnited States
CityCleveland, OH
Period09/11/1109/16/11

Keywords

  • Annihilation
  • Burgers vector
  • Threading dislocation
  • Vacancy

Fingerprint

Dive into the research topics of 'Synchrotron X-ray topography studies of the propagation and post-growth mutual interaction of threading growth dislocations with C-component of Burgers vector in PVT-Grown 4H-SiC'. Together they form a unique fingerprint.

Cite this