Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition

Christopher Y. Chow; Balaji Raghothamachar; Joan J. Carvajal; Hui Chen; Michael Dudley

doi:10.1557/proc-1080-o08-01

Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition

Christopher Y. Chow
, Balaji Raghothamachar
, Joan J. Carvajal
, Hui Chen
, Michael Dudley

Materials Science and Engineering

Stony Brook University
Universidad Rovira i Virgili

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, we report on the synthesis of gallium nitride (GaN) nanopowders on boron nitride (BN) substrates both with and without the use of metal catalyst by chemical vapor deposition (CVD). The synthesis process is based on the reaction between gallium (Ga) atoms from the decomposition of gallium acetylacetonate and ammonia (NH3) gas molecules. Using this process, gallium nitride (GaN) nanopowders have been synthesized at temperatures as low as 400°C, lower than previously reported. The grown nanopowders were characterized by SEM, EDX and TEM. Analysis reveals that higher yields were obtained by treating the BN substrates with Ni catalyst. Experiments to study the effect of growth conditions on the morphology of the nanopowders and analyze the growth mechanism are ongoing.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications
Publisher	Materials Research Society
Pages	20-25
Number of pages	6
ISBN (Print)	9781605609720
DOIs	https://doi.org/10.1557/proc-1080-o08-01
State	Published - 2008
Event	Semiconductor Nanowires-Growth, Physics, Devices and Applications - San Francisco, CA, United States Duration: Mar 24 2008 → Mar 28 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1080
ISSN (Print)	0272-9172

Conference

Conference	Semiconductor Nanowires-Growth, Physics, Devices and Applications
Country/Territory	United States
City	San Francisco, CA
Period	03/24/08 → 03/28/08

Access to Document

10.1557/proc-1080-o08-01

Cite this

Chow, C. Y., Raghothamachar, B., Carvajal, J. J., Chen, H., & Dudley, M. (2008). Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition. In Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications (pp. 20-25). (Materials Research Society Symposium Proceedings; Vol. 1080). Materials Research Society. https://doi.org/10.1557/proc-1080-o08-01

Chow, Christopher Y. ; Raghothamachar, Balaji ; Carvajal, Joan J. et al. / Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition. Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications. Materials Research Society, 2008. pp. 20-25 (Materials Research Society Symposium Proceedings).

@inproceedings{a01730947fe34332bbd515fe568941a3,

title = "Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition",

abstract = "In this study, we report on the synthesis of gallium nitride (GaN) nanopowders on boron nitride (BN) substrates both with and without the use of metal catalyst by chemical vapor deposition (CVD). The synthesis process is based on the reaction between gallium (Ga) atoms from the decomposition of gallium acetylacetonate and ammonia (NH3) gas molecules. Using this process, gallium nitride (GaN) nanopowders have been synthesized at temperatures as low as 400°C, lower than previously reported. The grown nanopowders were characterized by SEM, EDX and TEM. Analysis reveals that higher yields were obtained by treating the BN substrates with Ni catalyst. Experiments to study the effect of growth conditions on the morphology of the nanopowders and analyze the growth mechanism are ongoing.",

author = "Chow, \{Christopher Y.\} and Balaji Raghothamachar and Carvajal, \{Joan J.\} and Hui Chen and Michael Dudley",

year = "2008",

doi = "10.1557/proc-1080-o08-01",

language = "English",

isbn = "9781605609720",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "20--25",

booktitle = "Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications",

note = "Semiconductor Nanowires-Growth, Physics, Devices and Applications ; Conference date: 24-03-2008 Through 28-03-2008",

}

Chow, CY, Raghothamachar, B, Carvajal, JJ, Chen, H & Dudley, M 2008, Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition. in Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications. Materials Research Society Symposium Proceedings, vol. 1080, Materials Research Society, pp. 20-25, Semiconductor Nanowires-Growth, Physics, Devices and Applications, San Francisco, CA, United States, 03/24/08. https://doi.org/10.1557/proc-1080-o08-01

Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition. / Chow, Christopher Y.; Raghothamachar, Balaji; Carvajal, Joan J. et al.
Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications. Materials Research Society, 2008. p. 20-25 (Materials Research Society Symposium Proceedings; Vol. 1080).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition

AU - Chow, Christopher Y.

AU - Raghothamachar, Balaji

AU - Carvajal, Joan J.

AU - Chen, Hui

AU - Dudley, Michael

PY - 2008

Y1 - 2008

N2 - In this study, we report on the synthesis of gallium nitride (GaN) nanopowders on boron nitride (BN) substrates both with and without the use of metal catalyst by chemical vapor deposition (CVD). The synthesis process is based on the reaction between gallium (Ga) atoms from the decomposition of gallium acetylacetonate and ammonia (NH3) gas molecules. Using this process, gallium nitride (GaN) nanopowders have been synthesized at temperatures as low as 400°C, lower than previously reported. The grown nanopowders were characterized by SEM, EDX and TEM. Analysis reveals that higher yields were obtained by treating the BN substrates with Ni catalyst. Experiments to study the effect of growth conditions on the morphology of the nanopowders and analyze the growth mechanism are ongoing.

AB - In this study, we report on the synthesis of gallium nitride (GaN) nanopowders on boron nitride (BN) substrates both with and without the use of metal catalyst by chemical vapor deposition (CVD). The synthesis process is based on the reaction between gallium (Ga) atoms from the decomposition of gallium acetylacetonate and ammonia (NH3) gas molecules. Using this process, gallium nitride (GaN) nanopowders have been synthesized at temperatures as low as 400°C, lower than previously reported. The grown nanopowders were characterized by SEM, EDX and TEM. Analysis reveals that higher yields were obtained by treating the BN substrates with Ni catalyst. Experiments to study the effect of growth conditions on the morphology of the nanopowders and analyze the growth mechanism are ongoing.

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U2 - 10.1557/proc-1080-o08-01

DO - 10.1557/proc-1080-o08-01

M3 - Conference contribution

AN - SCOPUS:70449625693

SN - 9781605609720

T3 - Materials Research Society Symposium Proceedings

SP - 20

EP - 25

BT - Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications

PB - Materials Research Society

T2 - Semiconductor Nanowires-Growth, Physics, Devices and Applications

Y2 - 24 March 2008 through 28 March 2008

ER -

Chow CY, Raghothamachar B, Carvajal JJ, Chen H, Dudley M. Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition. In Materials Research Society Symposium Proceedings - Semiconductor Nanowires-Growth, Physics, Devices and Applications. Materials Research Society. 2008. p. 20-25. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-1080-o08-01

Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition

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