@inproceedings{dbb5a7a47c4b421bba08a7a9d565ece9,
title = "Synthesis of nanoporous GaN crystalline particles by chemical vapor deposition",
abstract = "Nanoporous, micron-size GaN particles with pores between 40 and 100 nm in diameter have been synthesized on boron nitride (BN) substrates using chemical vapor deposition (CVD) techniques. The synthesis process is based on the direct reaction of gallium atoms and ammonia molecules without the presence of intentional metal catalysts. Scanning electron micrographs reveal the formation of GaN nanoporous morphologies ranging from micron-size particles with hexagonal pyramidal prismatic shape to hexagonal platelets. The nanopores are only observed on the (0001) basal plane and aligned orderly along the [0001] crystallographic direction. High-Resolution Transmission Electron Microscopy (HRTEM) confirms that the nanoporous particles are, where analyzed, wurtzite GaN single crystal.",
keywords = "Chemical vapor deposition, GaN, Nanoporous semiconductors, SEM, TEM, Wide band-gap semiconductors",
author = "Carvajal, \{Joan J.\} and Nadia Gomez and Jie Bai and Michael Dudley and \{Carlos Rojo\}, J.",
year = "2006",
doi = "10.1117/12.656389",
language = "English",
isbn = "0819461636",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices",
note = "Gallium Nitride Materials and Devices ; Conference date: 23-01-2006 Through 25-01-2006",
}