Temperature dependencies of output characteristics of 1.3 μm InGaAsP/InP lasers with different profiles of p-doping

Temperature dependencies of the threshold current, device slope efficiency and heterobarrier electron leakage current from the active region of InGaAsP/InP multi-quantum-well lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p- doping, and that the variance in the temperature behavior of the threshold current and slope efficiency for lasers with different doping profiles cannot be explained by the change of the measured value of the leakage current with doping only. We show that doping of the p-cladding/SCH layer interface in InGaAsP/InP multi-quantum-well lasers leads to improvement of the device temperature performance. We also show that doping of the active region increases the value of the optical loss without degradation of characteristic temperature T₀.