The 3.0-3.2 νm wavelength range narrow ridge waveguide Sb-based semiconductor diode lasers operating up to 333 K

We have demonstrated Fabry-Perot single spatial mode antimonide-based type-I quantum-well ridge waveguide semiconductor diode lasers operating at 3.0-3.2 νm wavelength in continuous mode up to 333 K. Internal optical loss in narrow ridge devices was significantly reduced by using thick Si ₃N₄ dielectric films for planarization. The fabricated lasers operate in CW mode at room temperature with output powers exceeding 5 mW and have power consumption of less than 0.2 W at the output power of 1 mW, which is the power level needed in many gas sensing applications.