TY - GEN
T1 - The formation mechanism of carrot defects in SiC epifilms
AU - Chen, Hui
AU - Wang, Guan
AU - Chen, Yi
AU - Jia, Xiaoting
AU - Bai, Jie
AU - Dudley, Michael
PY - 2006
Y1 - 2006
N2 - Carrot-like defects in a 7° off-cut (from [0001] toward <12̄10> direction) 4H-SiC wafer with a 36μm thick 4H-SiC epilayer have been investigated using Nomarski optical microscopy, synchrotron white beam x-ray topography (SWBXT), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). X-ray topographs confirm that threading screw dislocations are often associated with the carrots. Cross-sectional TEM observation confirms that a prismatic stacking fault exists below the carrot. This fault was found to show contrast in all observed diffraction geometries except for g=0004. A model for the mechanism of formation of this type of defect during epitaxial growth is proposed.
AB - Carrot-like defects in a 7° off-cut (from [0001] toward <12̄10> direction) 4H-SiC wafer with a 36μm thick 4H-SiC epilayer have been investigated using Nomarski optical microscopy, synchrotron white beam x-ray topography (SWBXT), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). X-ray topographs confirm that threading screw dislocations are often associated with the carrots. Cross-sectional TEM observation confirms that a prismatic stacking fault exists below the carrot. This fault was found to show contrast in all observed diffraction geometries except for g=0004. A model for the mechanism of formation of this type of defect during epitaxial growth is proposed.
UR - https://www.scopus.com/pages/publications/33750353784
U2 - 10.1557/proc-0911-b05-24
DO - 10.1557/proc-0911-b05-24
M3 - Conference contribution
AN - SCOPUS:33750353784
SN - 1558998721
SN - 9781558998728
T3 - Materials Research Society Symposium Proceedings
SP - 163
EP - 168
BT - Silicon Carbide 2006 - Materials, Processing and Devices
PB - Materials Research Society
T2 - 2006 MRS Spring Meeting
Y2 - 18 April 2006 through 20 April 2006
ER -