The influence of annealing conditions on the growth and structure of embedded Pt nanocrystals

R. Giulian; L. L. Araujo; P. Kluth; D. J. Sprouster; C. S. Schnohr; B. Johannessen; G. J. Foran; M. C. Ridgway

doi:10.1063/1.3079506

The influence of annealing conditions on the growth and structure of embedded Pt nanocrystals

R. Giulian
, L. L. Araujo
, P. Kluth
, D. J. Sprouster
, C. S. Schnohr
, B. Johannessen
, G. J. Foran
, M. C. Ridgway

Materials Science and Engineering

Australian National University
Australian Nuclear Science and Technology Organisation

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a- SiO2 has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scattering measurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O2, or forming gas (95% N2: 5% H2) at temperatures ranging from 500 °C-1300 °C form spherical NCs with mean diameters ranging from 1-14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O2 and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 °C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm.

Original language	English
Article number	044303
Journal	Journal of Applied Physics
Volume	105
Issue number	4
DOIs	https://doi.org/10.1063/1.3079506
State	Published - 2009

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title = "The influence of annealing conditions on the growth and structure of embedded Pt nanocrystals",

abstract = "The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a- SiO2 has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scattering measurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O2, or forming gas (95\% N2: 5\% H2) at temperatures ranging from 500 °C-1300 °C form spherical NCs with mean diameters ranging from 1-14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O2 and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 °C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm.",

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T1 - The influence of annealing conditions on the growth and structure of embedded Pt nanocrystals

AU - Giulian, R.

AU - Araujo, L. L.

AU - Kluth, P.

AU - Sprouster, D. J.

AU - Schnohr, C. S.

AU - Johannessen, B.

AU - Foran, G. J.

AU - Ridgway, M. C.

PY - 2009

Y1 - 2009

N2 - The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a- SiO2 has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scattering measurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O2, or forming gas (95% N2: 5% H2) at temperatures ranging from 500 °C-1300 °C form spherical NCs with mean diameters ranging from 1-14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O2 and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 °C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm.

AB - The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a- SiO2 has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scattering measurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O2, or forming gas (95% N2: 5% H2) at temperatures ranging from 500 °C-1300 °C form spherical NCs with mean diameters ranging from 1-14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O2 and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 °C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm.

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U2 - 10.1063/1.3079506

DO - 10.1063/1.3079506

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VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 044303

ER -

The influence of annealing conditions on the growth and structure of embedded Pt nanocrystals

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