Theoretical and experimental comparison of optimized doping profiles for high-performance InP Gunn devices at 220-500 GHz

Ridha Kamoua; Heribert Eisele

Theoretical and experimental comparison of optimized doping profiles for high-performance InP Gunn devices at 220-500 GHz

Ridha Kamoua
, Heribert Eisele

Electrical Engineering

University of Leeds

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Different types of doping profiles are investigated theoretically and experimentally for their potential of improving the performance of InP Gunn devices at J-band (220-325 GHz) frequencies and above. As initial experimental results, devices with an optimized graded doping profile generated output power levels approximately twice the previous state-of-the-art values at 280-300 GHz. Simulations identified a flat doping profile with a notch at the cathode as even more promising. For example, an RF output power of 50 mW at 240 GHz is predicted for this profile compared to 42 m W at 240 GHz from an optimized graded doping profile.

Original language	English
Pages (from-to)	907-910
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
State	Published - 2003
Event	2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: Jun 8 2003 → Jun 13 2003

Cite this

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title = "Theoretical and experimental comparison of optimized doping profiles for high-performance InP Gunn devices at 220-500 GHz",

abstract = "Different types of doping profiles are investigated theoretically and experimentally for their potential of improving the performance of InP Gunn devices at J-band (220-325 GHz) frequencies and above. As initial experimental results, devices with an optimized graded doping profile generated output power levels approximately twice the previous state-of-the-art values at 280-300 GHz. Simulations identified a flat doping profile with a notch at the cathode as even more promising. For example, an RF output power of 50 mW at 240 GHz is predicted for this profile compared to 42 m W at 240 GHz from an optimized graded doping profile.",

author = "Ridha Kamoua and Heribert Eisele",

year = "2003",

language = "English",

volume = "2",

pages = "907--910",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

note = "2003 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 08-06-2003 Through 13-06-2003",

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T1 - Theoretical and experimental comparison of optimized doping profiles for high-performance InP Gunn devices at 220-500 GHz

AU - Kamoua, Ridha

AU - Eisele, Heribert

PY - 2003

Y1 - 2003

N2 - Different types of doping profiles are investigated theoretically and experimentally for their potential of improving the performance of InP Gunn devices at J-band (220-325 GHz) frequencies and above. As initial experimental results, devices with an optimized graded doping profile generated output power levels approximately twice the previous state-of-the-art values at 280-300 GHz. Simulations identified a flat doping profile with a notch at the cathode as even more promising. For example, an RF output power of 50 mW at 240 GHz is predicted for this profile compared to 42 m W at 240 GHz from an optimized graded doping profile.

AB - Different types of doping profiles are investigated theoretically and experimentally for their potential of improving the performance of InP Gunn devices at J-band (220-325 GHz) frequencies and above. As initial experimental results, devices with an optimized graded doping profile generated output power levels approximately twice the previous state-of-the-art values at 280-300 GHz. Simulations identified a flat doping profile with a notch at the cathode as even more promising. For example, an RF output power of 50 mW at 240 GHz is predicted for this profile compared to 42 m W at 240 GHz from an optimized graded doping profile.

UR - https://www.scopus.com/pages/publications/0043095286

M3 - Conference article

AN - SCOPUS:0043095286

SN - 0149-645X

VL - 2

SP - 907

EP - 910

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2003 IEEE MTT-S International Microwave Symposium Digest

Y2 - 8 June 2003 through 13 June 2003

ER -

Theoretical and experimental comparison of optimized doping profiles for high-performance InP Gunn devices at 220-500 GHz

Abstract

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