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Thermal Integrity of ReRAM-based Near-Memory Computing in 3D Integrated DNN Accelerators

  • Stony Brook University
  • Air Force Research Laboratory

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper, the thermal integrity of near-memory computing in 3D integrated deep neural network (DNN) accelerators is investigated. Both conventional memory technologies (such as SRAM and DRAM) and emerging resistive memory (ReRAM) technology are considered. Through silicon via (TSV) based 3D integration and monolithic inter-tier via (MIV) based 3D technologies are leveraged for near-memory computing. The results demonstrate that monolithic 3D integrated DNN accelerator is thermally more feasible than TSV-based 3D accelerator due to reduced thermal resistance to heat sink. Furthermore, for near-memory computing with three-tier 3D systems, ReRAM based accelerator produces the lowest temperature whereas embedded DRAM (eDRAM) significantly increases the peak temperature.

Original languageEnglish
Title of host publicationProceedings - 2023 IEEE 36th International System-on-Chip Conference, SOCC 2023
EditorsJurgen Becker, Andrew Marshall, Tanja Harbaum, Amlan Ganguly, Fahad Siddiqui, Kieran McLaughlin
PublisherIEEE Computer Society
ISBN (Electronic)9798350300116
DOIs
StatePublished - 2023
Event36th IEEE International System-on-Chip Conference, SOCC 2023 - Santa Clara, United States
Duration: Sep 5 2023Sep 8 2023

Publication series

NameInternational System on Chip Conference
Volume2023-September
ISSN (Print)2164-1676
ISSN (Electronic)2164-1706

Conference

Conference36th IEEE International System-on-Chip Conference, SOCC 2023
Country/TerritoryUnited States
CitySanta Clara
Period09/5/2309/8/23

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