TY - GEN
T1 - Thermal system design and dislocation reduction for growth of wide bandgap crystals
AU - Ma, R. H.
AU - Zhang, H.
AU - Dudley, M.
AU - Prasad, V.
PY - 2003
Y1 - 2003
N2 - In SiC vapor growth, micropipes and dislocations that originate at the seed/boule interface can continuously propagate into the newly grown crystal. They adversely affect the quality of the crystals. The defect density can be reduced by the method of growing a large diameter crystal from a small seed through lateral growth under controlled thermal environment. In this paper, SiC growth processes with varying thermal conditions have been simulated. The effects of operational parameters such as axial and radial temperature gradients, and the presence of polycrystal are also investigated. The current finding can also help in the design of AlN/GaN growth system.
AB - In SiC vapor growth, micropipes and dislocations that originate at the seed/boule interface can continuously propagate into the newly grown crystal. They adversely affect the quality of the crystals. The defect density can be reduced by the method of growing a large diameter crystal from a small seed through lateral growth under controlled thermal environment. In this paper, SiC growth processes with varying thermal conditions have been simulated. The effects of operational parameters such as axial and radial temperature gradients, and the presence of polycrystal are also investigated. The current finding can also help in the design of AlN/GaN growth system.
UR - https://www.scopus.com/pages/publications/1842791602
U2 - 10.1115/ht2003-47564
DO - 10.1115/ht2003-47564
M3 - Conference contribution
AN - SCOPUS:1842791602
SN - 0791836959
SN - 9780791836958
T3 - Proceedings of the ASME Summer Heat Transfer Conference
SP - 353
EP - 354
BT - Proceedings of the 2003 ASME Summer Heat Transfer Conference, Volume 3
PB - American Society of Mechanical Engineers
T2 - 2003 ASME Summer Heat Transfer Conference (HT2003)
Y2 - 21 July 2003 through 23 July 2003
ER -