Skip to main navigation Skip to search Skip to main content

Thermoelectric properties of magnesium silicide deposited by use of an atmospheric plasma thermal spray

  • Stony Brook University

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The thermoelectric properties of magnesium silicide (Mg2Si) samples prepared by use of an atmospheric plasma spray (APS) were compared with those of samples prepared from the same feedstock powder by use of the conventional hot-pressing method. The characterization performed included measurement of thermal conductivity, electrical conductivity, Seebeck coefficient, and figure of merit, ZT. X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive x-ray spectroscopy (EDX) were used to assess how phase and microstructure affected the thermoelectric properties of the samples. Hall effect measurements furnished carrier concentration, and measurement of Hall mobility provided further insight into electrical conductivity and Seebeck coefficient. Low temperature and high velocity APS using an internal-powder distribution system achieved a phase of composition similar to that of the feedstock powder. Thermal spraying was demonstrated in this work to be an effective means of reducing the thermal conductivity of Mg2Si; this may be because of pores and cracks in the sprayed sample. Vacuum-annealed APS samples were found to have very high Seebeck coefficients. To further improve the figure of merit, carrier concentration must be adjusted and carrier mobility must be enhanced.

Original languageEnglish
Pages (from-to)2723-2730
Number of pages8
JournalJournal of Electronic Materials
Volume43
Issue number7
DOIs
StatePublished - Jul 2014

Keywords

  • APS
  • Thermoelectrics
  • figure of merit
  • magnesium silicide
  • thermal spray

Fingerprint

Dive into the research topics of 'Thermoelectric properties of magnesium silicide deposited by use of an atmospheric plasma thermal spray'. Together they form a unique fingerprint.

Cite this