Abstract
We have performed time-resolved measurements of the far-infrared photoconductivity of the two-dimensional electron system in GaAs/AlGaAs heterostructures in the integer quantum Hall regime (near filling factor ν = 2) by the application of a p-Ge laser radiation. We have found, that the photoresponse (PR) signal has two components, a bolometric component with a decay time not longer than 1-2 μs, and a cyclotron resonance-related component of opposite polarity with a decay time of about 4-5 μs. We have observed a strong dependence of the PR signal on the filling factor, sample current and laser intensity. Surprisingly, no pronounced dependence of the PR decay times on these parameters and on the electron mobility was found. Accordingly, we have found a decreasing influence of the mobility on the critical drift length of the quantum Hall effect breakdown with increasing amplitude when applying short electric pulses.
| Original language | English |
|---|---|
| Pages (from-to) | 144-148 |
| Number of pages | 5 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 12 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Jan 2002 |
| Event | 14th International Conference on the - Prague, Czech Republic Duration: Jul 30 2001 → Aug 3 2001 |
Keywords
- Photoconductive and photovoltaic effects
- Quantum Hall effects
- Time-resolved optical spectroscopies
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