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Time-resolved far-infrared spectroscopy of quantum Hall systems

  • N. G. Kalugin
  • , Yu B. Vasilyev
  • , S. D. Suchalkin
  • , G. Nachtwei
  • , B. E. Sagol
  • , K. Eberl
  • Technical University of Braunschweig
  • Ioffe Physical Technical Institute
  • Max Planck Institute for Solid State Research

Research output: Contribution to journalConference articlepeer-review

Abstract

We have performed time-resolved measurements of the far-infrared photoconductivity of the two-dimensional electron system in GaAs/AlGaAs heterostructures in the integer quantum Hall regime (near filling factor ν = 2) by the application of a p-Ge laser radiation. We have found, that the photoresponse (PR) signal has two components, a bolometric component with a decay time not longer than 1-2 μs, and a cyclotron resonance-related component of opposite polarity with a decay time of about 4-5 μs. We have observed a strong dependence of the PR signal on the filling factor, sample current and laser intensity. Surprisingly, no pronounced dependence of the PR decay times on these parameters and on the electron mobility was found. Accordingly, we have found a decreasing influence of the mobility on the critical drift length of the quantum Hall effect breakdown with increasing amplitude when applying short electric pulses.

Original languageEnglish
Pages (from-to)144-148
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
StatePublished - Jan 2002
Event14th International Conference on the - Prague, Czech Republic
Duration: Jul 30 2001Aug 3 2001

Keywords

  • Photoconductive and photovoltaic effects
  • Quantum Hall effects
  • Time-resolved optical spectroscopies

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