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Towards accurate charge transport with SINIS turnstile

  • V. F. Maisi
  • , O. P. Sairay
  • , A. Kemppinen
  • , Yu A. Pashkin
  • , D. V. Averin
  • , A. Manninen
  • , J. P. Pekola
  • Centre for Metrology and Accreditation (MIKES)
  • Aalto University
  • RIKEN
  • P.N. Lebedev Physical Institute of the Russian Academy of Sciences

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We discuss the current quantization obtainable in SINIS turnstiles. Various error processes, for example environmentally assisted and higher order tunneling as well as quasiparticle exitations in superconducting leads, may limit the achievable quantization. We argue that by careful design of the device, relative uncertainty of less than 10 -7, required by metrological applications, is feasible. We also present a scheme for error detection of the turnstiles.

Original languageEnglish
Title of host publication2012 Conference on Precision Electromagnetic Measurements, CPEM 2012
Pages248-249
Number of pages2
DOIs
StatePublished - 2012
Event2012 Conference on Precision Electromagnetic Measurements, CPEM 2012 - Washington, DC, United States
Duration: Jul 1 2012Jul 6 2012

Publication series

NameCPEM Digest (Conference on Precision Electromagnetic Measurements)
ISSN (Print)0589-1485

Conference

Conference2012 Conference on Precision Electromagnetic Measurements, CPEM 2012
Country/TerritoryUnited States
CityWashington, DC
Period07/1/1207/6/12

Keywords

  • Measurement standards
  • metrology
  • nanoelectronics
  • quantum mechanics
  • single electron devices
  • single electron transistors

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