Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field

H. Gjersdal; E. Bolle; M. Borri; C. Da Via; O. Dorholt; S. Fazio; P. Grenier; S. Grinstein; P. Hansson; J. Hasi; F. Hugging; P. Jackson; C. Kenney; M. Kocian; A. La Rosa; A. Mastroberardino; P. Nordahl; F. Rivero; O. Røhne; H. Sandaker; K. Sjøbæk; T. Slaviec; D. Su; J. Tsung; D. Tsybychev; N. Wermes; C. Young

doi:10.1016/j.nima.2010.04.083

Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field

H. Gjersdal
, E. Bolle
, M. Borri
, C. Da Via
, O. Dorholt
, S. Fazio
, P. Grenier
, S. Grinstein
, P. Hansson
, J. Hasi
, F. Hugging
, P. Jackson
, C. Kenney
, M. Kocian
, A. La Rosa
, A. Mastroberardino
, P. Nordahl
, F. Rivero
, O. Røhne
, H. Sandaker

K. Sjøbæk, T. Slaviec, D. Su, J. Tsung, D. Tsybychev, N. Wermes, C. Young

Physics and Astronomy

University of Oslo
University of Turin
University of Calabria
SLAC National Accelerator Laboratory
IFIC-Barcelona
University of Bonn
CERN
University of Bergen
Czech Technical University in Prague

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400μm long pixel side, this resulting in a pn inter-electrode distance of ∼71μm. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.

Original language	English
Pages (from-to)	S42-S49
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	636
Issue number	1 SUPPL.
DOIs	https://doi.org/10.1016/j.nima.2010.04.083
State	Published - Apr 21 2011

Keywords

3D pixels
Charge sharing
High energy physics
Radiation hardness
Test beam
Tracking efficiency

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10.1016/j.nima.2010.04.083

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Gjersdal, H., Bolle, E., Borri, M., Da Via, C., Dorholt, O., Fazio, S., Grenier, P., Grinstein, S., Hansson, P., Hasi, J., Hugging, F., Jackson, P., Kenney, C., Kocian, M., La Rosa, A., Mastroberardino, A., Nordahl, P., Rivero, F., Røhne, O., ... Young, C. (2011). Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field. Nuclear Inst. and Methods in Physics Research, A, 636(1 SUPPL.), S42-S49. https://doi.org/10.1016/j.nima.2010.04.083

@article{d00392b3555041bbaead2d760ca2b2d7,

title = "Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field",

abstract = "A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400μm long pixel side, this resulting in a pn inter-electrode distance of ∼71μm. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.",

keywords = "3D pixels, Charge sharing, High energy physics, Radiation hardness, Test beam, Tracking efficiency",

author = "H. Gjersdal and E. Bolle and M. Borri and \{Da Via\}, C. and O. Dorholt and S. Fazio and P. Grenier and S. Grinstein and P. Hansson and J. Hasi and F. Hugging and P. Jackson and C. Kenney and M. Kocian and \{La Rosa\}, A. and A. Mastroberardino and P. Nordahl and F. Rivero and O. R{\o}hne and H. Sandaker and K. Sj{\o}b{\ae}k and T. Slaviec and D. Su and J. Tsung and D. Tsybychev and N. Wermes and C. Young",

year = "2011",

month = apr,

day = "21",

doi = "10.1016/j.nima.2010.04.083",

language = "English",

volume = "636",

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journal = "Nuclear Inst. and Methods in Physics Research, A",

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Gjersdal, H, Bolle, E, Borri, M, Da Via, C, Dorholt, O, Fazio, S, Grenier, P, Grinstein, S, Hansson, P, Hasi, J, Hugging, F, Jackson, P, Kenney, C, Kocian, M, La Rosa, A, Mastroberardino, A, Nordahl, P, Rivero, F, Røhne, O, Sandaker, H, Sjøbæk, K, Slaviec, T, Su, D, Tsung, J, Tsybychev, D, Wermes, N & Young, C 2011, 'Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field', Nuclear Inst. and Methods in Physics Research, A, vol. 636, no. 1 SUPPL., pp. S42-S49. https://doi.org/10.1016/j.nima.2010.04.083

TY - JOUR

T1 - Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field

AU - Gjersdal, H.

AU - Bolle, E.

AU - Borri, M.

AU - Da Via, C.

AU - Dorholt, O.

AU - Fazio, S.

AU - Grenier, P.

AU - Grinstein, S.

AU - Hansson, P.

AU - Hasi, J.

AU - Hugging, F.

AU - Jackson, P.

AU - Kenney, C.

AU - Kocian, M.

AU - La Rosa, A.

AU - Mastroberardino, A.

AU - Nordahl, P.

AU - Rivero, F.

AU - Røhne, O.

AU - Sandaker, H.

AU - Sjøbæk, K.

AU - Slaviec, T.

AU - Su, D.

AU - Tsung, J.

AU - Tsybychev, D.

AU - Wermes, N.

AU - Young, C.

PY - 2011/4/21

Y1 - 2011/4/21

N2 - A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400μm long pixel side, this resulting in a pn inter-electrode distance of ∼71μm. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.

AB - A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400μm long pixel side, this resulting in a pn inter-electrode distance of ∼71μm. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.

KW - 3D pixels

KW - Charge sharing

KW - High energy physics

KW - Radiation hardness

KW - Test beam

KW - Tracking efficiency

UR - https://www.scopus.com/pages/publications/79955906651

U2 - 10.1016/j.nima.2010.04.083

DO - 10.1016/j.nima.2010.04.083

M3 - Article

AN - SCOPUS:79955906651

SN - 0168-9002

VL - 636

SP - S42-S49

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1 SUPPL.

ER -

Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4 T magnetic field

Abstract

Keywords

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