Transport in double-barrier resonant tunneling structures

V. J. Goldman; D. C. Tsui; J. E. Cunningham; W. T. Tsang

doi:10.1063/1.337909

Transport in double-barrier resonant tunneling structures

V. J. Goldman
, D. C. Tsui
, J. E. Cunningham
, W. T. Tsang

Physics and Astronomy

Princeton University
Nokia

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report measurements of current-voltage characteristics of AlGaAs/GaAs double-barrier resonant tunneling structure (DBRTS) with current peak-to-valley ratio exceeding 13:1 at 77 K. We also show that space-charge layers formed in a biased device influence significantly the charge transport in DBRTS.

Original language	English
Pages (from-to)	2693-2695
Number of pages	3
Journal	Journal of Applied Physics
Volume	61
Issue number	7
DOIs	https://doi.org/10.1063/1.337909
State	Published - 1987

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@article{75be992dd0ad4d10963c1540b07b095d,

title = "Transport in double-barrier resonant tunneling structures",

abstract = "We report measurements of current-voltage characteristics of AlGaAs/GaAs double-barrier resonant tunneling structure (DBRTS) with current peak-to-valley ratio exceeding 13:1 at 77 K. We also show that space-charge layers formed in a biased device influence significantly the charge transport in DBRTS.",

author = "Goldman, \{V. J.\} and Tsui, \{D. C.\} and Cunningham, \{J. E.\} and Tsang, \{W. T.\}",

year = "1987",

doi = "10.1063/1.337909",

language = "English",

volume = "61",

pages = "2693--2695",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "7",

}

TY - JOUR

T1 - Transport in double-barrier resonant tunneling structures

AU - Goldman, V. J.

AU - Tsui, D. C.

AU - Cunningham, J. E.

AU - Tsang, W. T.

PY - 1987

Y1 - 1987

N2 - We report measurements of current-voltage characteristics of AlGaAs/GaAs double-barrier resonant tunneling structure (DBRTS) with current peak-to-valley ratio exceeding 13:1 at 77 K. We also show that space-charge layers formed in a biased device influence significantly the charge transport in DBRTS.

AB - We report measurements of current-voltage characteristics of AlGaAs/GaAs double-barrier resonant tunneling structure (DBRTS) with current peak-to-valley ratio exceeding 13:1 at 77 K. We also show that space-charge layers formed in a biased device influence significantly the charge transport in DBRTS.

UR - https://www.scopus.com/pages/publications/36549101348

U2 - 10.1063/1.337909

DO - 10.1063/1.337909

M3 - Article

AN - SCOPUS:36549101348

SN - 0021-8979

VL - 61

SP - 2693

EP - 2695

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Transport in double-barrier resonant tunneling structures

Abstract

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