Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors

Youxi Lin; Ding Wang; Dmitry Donetsky; Gela Kipshidze; Leon Shterengas; Leonid E. Vorobjev; Gregory Belenky

doi:10.1088/0268-1242/29/11/112002

Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors

Youxi Lin
, Ding Wang
, Dmitry Donetsky
, Gela Kipshidze
, Leon Shterengas
, Leonid E. Vorobjev
, Gregory Belenky

Electrical Engineering

Stony Brook University
Peter the Great St. Petersburg Polytechnic University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A new method for determination of minority carrier lifetimes, mobilities and diffusion lengths is demonstrated. From the transient response of long wavelength infrared barrier detectors with a cut-off of 10 micron, the mobility of the minority holes and their lifetime in bulk InAs0.6Sb0.4 at T = 77 K was determined to be 800 cm² V^-1s^-1 and 165 ns, respectively.

Original language	English
Article number	112002
Journal	Semiconductor Science and Technology
Volume	29
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/29/11/112002
State	Published - Nov 1 2014

Keywords

carrier lifetime
InAsSb
MBE
metamorphic growth
mobility
photodetectors
time response

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10.1088/0268-1242/29/11/112002

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title = "Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors",

abstract = "A new method for determination of minority carrier lifetimes, mobilities and diffusion lengths is demonstrated. From the transient response of long wavelength infrared barrier detectors with a cut-off of 10 micron, the mobility of the minority holes and their lifetime in bulk InAs0.6Sb0.4 at T = 77 K was determined to be 800 cm2 V-1s-1 and 165 ns, respectively.",

keywords = "carrier lifetime, InAsSb, MBE, metamorphic growth, mobility, photodetectors, time response",

author = "Youxi Lin and Ding Wang and Dmitry Donetsky and Gela Kipshidze and Leon Shterengas and Vorobjev, \{Leonid E.\} and Gregory Belenky",

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T1 - Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors

AU - Lin, Youxi

AU - Wang, Ding

AU - Donetsky, Dmitry

AU - Kipshidze, Gela

AU - Shterengas, Leon

AU - Vorobjev, Leonid E.

AU - Belenky, Gregory

PY - 2014/11/1

Y1 - 2014/11/1

N2 - A new method for determination of minority carrier lifetimes, mobilities and diffusion lengths is demonstrated. From the transient response of long wavelength infrared barrier detectors with a cut-off of 10 micron, the mobility of the minority holes and their lifetime in bulk InAs0.6Sb0.4 at T = 77 K was determined to be 800 cm2 V-1s-1 and 165 ns, respectively.

AB - A new method for determination of minority carrier lifetimes, mobilities and diffusion lengths is demonstrated. From the transient response of long wavelength infrared barrier detectors with a cut-off of 10 micron, the mobility of the minority holes and their lifetime in bulk InAs0.6Sb0.4 at T = 77 K was determined to be 800 cm2 V-1s-1 and 165 ns, respectively.

KW - carrier lifetime

KW - InAsSb

KW - MBE

KW - metamorphic growth

KW - mobility

KW - photodetectors

KW - time response

UR - https://www.scopus.com/pages/publications/84908032816

U2 - 10.1088/0268-1242/29/11/112002

DO - 10.1088/0268-1242/29/11/112002

M3 - Article

AN - SCOPUS:84908032816

SN - 0268-1242

VL - 29

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

M1 - 112002

ER -

Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors

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Keywords

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